Datasheet SCT3160KL (Rohm) - 2
Hersteller | Rohm |
Beschreibung | N-channel SiC power MOSFET |
Seiten / Seite | 13 / 2 — SCT3160KL. Thermal resistance. Electrical characteristics. … |
Dateiformat / Größe | PDF / 716 Kb |
Dokumentensprache | Englisch |
SCT3160KL. Thermal resistance. Electrical characteristics. TSQ50211-SCT3160KL. 14.Jun.2018 - Rev.005
Modelllinie für dieses Datenblatt
Textversion des Dokuments
SCT3160KL
Datasheet l
Thermal resistance
Values Parameter Symbol Unit Min. Typ. Max. Thermal resistance, junction - case RthJC - 1.12 1.46 C/W l
Electrical characteristics
(Ta = 25°C) Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V(BR)DSS VGS = 0V, ID = 1mA 1200 - - V voltage VDS = 1200V, VGS = 0V Zero gate voltage I Tj = 25°C - m DSS 1 10 A drain current Tj = 150°C - 2 - Gate - Source leakage current IGSS+ VGS = +22V, VDS = 0V - - 100 nA Gate - Source leakage current IGSS- VGS = -4V, VDS = 0V - - -100 nA Gate threshold voltage VGS (th) VDS = 10V, ID = 2.5mA 2.7 - 5.6 V VGS = 18V, ID = 5A Static drain - source R *5 Tj = 25°C - 160 208 mW on - state resistance DS(on) Tj = 125°C - 240 - Gate input resistance RG f = 1MHz, open drain - 18 - W www.rohm.com
TSQ50211-SCT3160KL
© 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 2/12
14.Jun.2018 - Rev.005