Datasheet SCT3160KL (Rohm) - 9

HerstellerRohm
BeschreibungN-channel SiC power MOSFET
Seiten / Seite13 / 9 — SCT3160KL. Electrical characteristic curves. TSQ50211-SCT3160KL. …
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SCT3160KL. Electrical characteristic curves. TSQ50211-SCT3160KL. 14.Jun.2018 - Rev.005

SCT3160KL Electrical characteristic curves TSQ50211-SCT3160KL 14.Jun.2018 - Rev.005

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SCT3160KL
Datasheet l
Electrical characteristic curves
Fig.15 Typical Capacitance Fig.16 Coss Stored Energy vs. Drain - Source Voltage 10000 16 T = 25ºC a 14 [mJ] 1000 12 C SS iss O : E 10 C [pF] rgy : 100 C 8 e oss ne c E 6 itan c tored 10 Crss S 4 s Capa T = 25ºC a f = 1MHz Cos 2 V = 0V GS 1 0 0.1 1 10 100 1000 0 100 200 300 400 500 600 700 800 Drain - Source Voltage : V [V] Drain - Source Voltage : V [V] DS DS Fig.17 Switching Characteristics Fig.18 Dynamic Input Characteristics 10000 20 T = 25ºC a T = 25ºC a V = 400V DD V = 600V DD V = 18V GS I = 5A 1000 tf [V] D 15 R = 0W G Pulsed ] Pulsed GS [ns : V : t e e 100 tag 10 im ol T V td(off) e ng tr hi rc itc 10 ou 5 w t S d(on) S - ate G 1 0 0.1 1 10 100 0 5 10 15 20 25 30 35 40 45 Drain Current : I [A] Total Gate Charge : Q [nC] D g www.rohm.com
TSQ50211-SCT3160KL
© 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 9/12
14.Jun.2018 - Rev.005