Datasheet SCT3160KL (Rohm) - 5
| Hersteller | Rohm |
| Beschreibung | N-channel SiC power MOSFET |
| Seiten / Seite | 13 / 5 — SCT3160KL. Electrical characteristic curves. TSQ50211-SCT3160KL. … |
| Dateiformat / Größe | PDF / 716 Kb |
| Dokumentensprache | Englisch |
SCT3160KL. Electrical characteristic curves. TSQ50211-SCT3160KL. 14.Jun.2018 - Rev.005
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SCT3160KL
Datasheet l
Electrical characteristic curves
Fig.1 Power Dissipation Derating Curve Fig.2 Maximum Safe Operating Area 120 1000 Operation in this area is limited by RDS(ON) 100 ] T = 25ºC a [W 100 ] Single Pulse D 80 [A : P I D P = 100µs : W on t ti 60 10 ren ipa s s Cur P = 1ms 40 W Di n ai er 1 Dr P = 10ms W ow 20 P P = 100ms W 0 0.1 0 50 100 150 200 0.1 1 10 100 1000 10000 Case Temperature : T [°C] Drain - Source Voltage : V [V] C DS Fig.3 Typical Transient Thermal Resistance vs. Pulse Width ] 10 /W [K th : R 1 e c tan is 0.1 Res al rm he T t 0.01 ien T = 25ºC s a Single Pulse ran T 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width : P [s] W www.rohm.com
TSQ50211-SCT3160KL
© 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 5/12
14.Jun.2018 - Rev.005
Datasheet l
Electrical characteristic curves
Fig.1 Power Dissipation Derating Curve Fig.2 Maximum Safe Operating Area 120 1000 Operation in this area is limited by RDS(ON) 100 ] T = 25ºC a [W 100 ] Single Pulse D 80 [A : P I D P = 100µs : W on t ti 60 10 ren ipa s s Cur P = 1ms 40 W Di n ai er 1 Dr P = 10ms W ow 20 P P = 100ms W 0 0.1 0 50 100 150 200 0.1 1 10 100 1000 10000 Case Temperature : T [°C] Drain - Source Voltage : V [V] C DS Fig.3 Typical Transient Thermal Resistance vs. Pulse Width ] 10 /W [K th : R 1 e c tan is 0.1 Res al rm he T t 0.01 ien T = 25ºC s a Single Pulse ran T 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width : P [s] W www.rohm.com
TSQ50211-SCT3160KL
© 2018 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 5/12
14.Jun.2018 - Rev.005