Datasheet IRF820, SiHF820 (Vishay) - 4

IRF820, SiHF820
Vishay Siliconix 800 VGS = 0 V, f = 1 MHz C = C + C , C Shorted iss gs gd ds C = C rss gd 600 C = C + C oss ds gd Ciss ain Current (A) 400 100 150 °C erse Dr Capacitance (pF) C 25 °C oss v 200 , Re I SD Crss V = 0 V GS 0 100 101 0.4 0.6 0.8 1.0 1.2 91059_05 VDS, Drain-to-Source Voltage (V) 91059_07 VSD, Source-to-Drain Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage
20 I = 2.1 A 102 D Operation in this area limited 5 by R V = 400 V DS(on) DS 16 2 ltage (V) V = 250 V 10 10 µs o DS V 5 12 V = 100 V DS 100 µs 2 1 1 ms 8 5 ain Current (A) 10 ms 2 , Dr I D 0.1 , Gate-to-Source 4 5 T = 25
°
C GS C V For test circuit T = 150
°
C 2 J see figure 13 0 Single Pulse 10-2 2 5 0 4 8 12 16 20 24 2 5 2 5 2 5 2 5 0.1 1 10 102 103 104 91059_06 QG, Total Gate Charge (nC) 91059_08 VDS, Drain-to-Source Voltage (V)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 8 - Maximum Safe Operating Area
www.vishay.com Document Number: 91059 4 S11-0507-Rev. C, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000