Datasheet IRF820, SiHF820 (Vishay) - 5

IRF820, SiHF820
Vishay Siliconix RD VDS 2.5 VGS D.U.T. RG 2.0 + - VDD 10 V 1.5 Pulse width ≤ 1 µs Duty factor ≤ 0.1 % ain Current (A) 1.0
Fig. 10a - Switching Time Test Circuit
, Dr I D 0.5 VDS 0.0 90 % 25 50 75 100 125 150 91059_09 TC, Case Temperature (°C) 10 %
Fig. 9 - Maximum Drain Current vs. Case Temperature
VGS t t t t d(on) r d(off) f
Fig. 10b - Switching Time Waveforms
10 ) thJC D = 0.5 1 0.2 PDM 0.1 0.05 0.1 t 0.02 1 mal Response (Z Single Pulse t 0.01 2 (Thermal Response) Ther Notes: 1. Duty Factor, D = t /t 1 2 2. Peak T = P x Z + T j DM thJC C 10-2 10-5 10-4 10-3 10-2 0.1 1 10 91059_11 t1, Rectangular Pulse Duration (s)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
L VDS VDS Vary tp to obtain required I t AS p VDD R D.U.T. G + V - DD I V AS DS 10 V t 0.01 p Ω IAS
Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms
Document Number: 91059 www.vishay.com S11-0507-Rev. C, 21-Mar-11 5 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000