Datasheet IRF820, SiHF820 (Vishay) - 3

IRF820, SiHF820
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted) VGS Top 15 V 10 V 8.0 V 7.0 V 150 °C 6.0 V 5.5 V 5.0 V 100 25 °C Bottom 4.5 V 100 ain Current (A) ain Current (A) , Dr , Dr I D 4.5 V I D 10-1 20 µs Pulse Width 20 µs Pulse Width T = 25 °C V = 50 V C DS 10-1 100 101 4 5 6 7 8 9 10 91059_01 VDS, Drain-to-Source Voltage (V) 91059_03 VGS, Gate-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics, TC = 25 °C Fig. 3 - Typical Transfer Characteristics
3.0 VGS I = 2.1 A D Top 15 V V = 10 V GS 10 V 2.5 8.0 V 7.0 V 6.0 V 2.0 ed) 100 5.5 V 4.5 V 5.0 V 1.5 Bottom 4.5 V maliz ain Current (A) (Nor , Dr 1.0 I D ain-to-Source On Resistance , Dr 0.5 20 µs Pulse Width T = 150 °C C DS(on) 10-1 0.0 R 100 101 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160 91059_02 VDS, Drain-to-Source Voltage (V) 91059_04 TJ, Junction Temperature (°C)
Fig. 2 - Typical Output Characteristics, TC = 150 °C Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91059 www.vishay.com S11-0507-Rev. C, 21-Mar-11 3 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000