Datasheet S1227 (Hamamatsu) - 2
| Hersteller | Hamamatsu |
| Beschreibung | Si photodiodes. For UV to visible, precision photometry; suppressed IR sensitivity |
| Seiten / Seite | 5 / 2 — Si photodiodes S1227 series Spectral response. S1227-BQ series S1227-BR … |
| Dateiformat / Größe | PDF / 230 Kb |
| Dokumentensprache | Englisch |
Si photodiodes S1227 series Spectral response. S1227-BQ series S1227-BR series
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Si photodiodes S1227 series Spectral response
S1227-BQ series S1227-BR series
(Typ. Ta=25 °C) 0.7 0.6 Photosensitivity (A/W) Photosensitivity (A/W) 0.6
0.5
0.4
0.3
0.2
0.1
0
190 (Typ. Ta=25 °C) 0.7 0.5
0.4
0.3
0.2
0.1 400 600 800 0
190 1000 Wavelength (nm) 400 600 800 1000 Wavelength (nm)
KSPDB0094EC KSPDB0307EA Photosensitivity temperature characteristics
(Typ. ) +1.5 100 pA +1.0 +0.5 (Typ. Ta=25 °C) 1 nA Dark current Temperature coefficient (%/°C) Dark current vs. reverse voltage S1227-1010BQ/BR S1227-66BQ/BR
10 pA 1 pA 0 S1227-33BQ/BR
S1227-16BQ/BR
-0.5
190 400 600 800 1000 100 fA
0.01 0.1 1 10 Reverse voltage (V) Wavelength (nm)
KSPDB0030EB KSPDB0096EB 2
S1227-BQ series S1227-BR series
(Typ. Ta=25 °C) 0.7 0.6 Photosensitivity (A/W) Photosensitivity (A/W) 0.6
0.5
0.4
0.3
0.2
0.1
0
190 (Typ. Ta=25 °C) 0.7 0.5
0.4
0.3
0.2
0.1 400 600 800 0
190 1000 Wavelength (nm) 400 600 800 1000 Wavelength (nm)
KSPDB0094EC KSPDB0307EA Photosensitivity temperature characteristics
(Typ. ) +1.5 100 pA +1.0 +0.5 (Typ. Ta=25 °C) 1 nA Dark current Temperature coefficient (%/°C) Dark current vs. reverse voltage S1227-1010BQ/BR S1227-66BQ/BR
10 pA 1 pA 0 S1227-33BQ/BR
S1227-16BQ/BR
-0.5
190 400 600 800 1000 100 fA
0.01 0.1 1 10 Reverse voltage (V) Wavelength (nm)
KSPDB0030EB KSPDB0096EB 2