Datasheet S1227 (Hamamatsu)
| Hersteller | Hamamatsu |
| Beschreibung | Si photodiodes. For UV to visible, precision photometry; suppressed IR sensitivity |
| Seiten / Seite | 5 / 1 — Si photodiodes. S1227 series For UV to visible, precision photometry;. … |
| Dateiformat / Größe | PDF / 230 Kb |
| Dokumentensprache | Englisch |
Si photodiodes. S1227 series For UV to visible, precision photometry;. suppressed IR sensitivity
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Si photodiodes
S1227 series For UV to visible, precision photometry;
suppressed IR sensitivity
These Si photodiodes have suppressed IR sensitivity. They are suitable for low-light-level detection in analysis and the like. Features Applications High UV sensitivity (quartz window type): QE 75 % (λ=200 nm) Analytical equipment Suppressed IR sensitivity Optical measurement equipment, etc. Low dark current Structure / Absolute maximum ratings Type no. S1227-16BQ*
S1227-16BR
S1227-33BQ*
S1227-33BR
S1227-66BQ*
S1227-66BR
S1227-1010BQ*
S1227-1010BR Package Photosensitive
area size Effective
photosensitive
area (mm) (mm) (mm2) 2.7 × 15 1.1 × 5.9 5.9 6 × 7.6 2.4 × 2.4 5.7 8.9 × 10.1 5.8 × 5.8 33 15 × 16.5 10 × 10 100 Window
material
Quatz
Resin potting
Quatz
Resin potting
Quatz
Resin potting
Quatz
Resin potting Absolute maximum ratings
Operating
Storage
Reverse
temperature
temperature
voltage
Topr
Tstg
VR max
(V)
(°C)
(°C) 5 -20 to +60 -20 to +80 * Refer to “Precautions against UV light exposure.”
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the
product within the absolute maximum ratings. Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted) Type no. 200 nm
λp (nm)
S1227-16BQ 190 to 1000
S1227-16BR
340 to 1000
S1227-33BQ 190 to 1000
S1227-33BR
340 to 1000
S1227-66BQ 190 to 1000
S1227-66BR
340 to 1000
S1227-1010BQ 190 to 1000
S1227-1010BR 340 to 1000 Min. Typ. (nm) 720 Short circuit
Terminal
Dark
Shunt
Rise
current
capacitance resistance
current Temp.
time
Isc
Ct
ID
Rsh
coefficient
tr
100 lx
VR=10 mV TCID
VR=0 V VR=10 mV
VR=0 V
He-Ne Min. Typ. Max.
(GΩ)
RL=1 kΩ f=10 kHz
Laser
633
Min. Typ.
nm (μA) (μA) (pA) (times/°C)
(μs)
(pF)
0.34 2.0 3.2
5
0.5
170
2
20
0.39 2.2 3.7
0.34 2.0 3.0
5
0.5
160
2
20
0.39 2.2 3.7
1.12
0.34 11
16
20
2
950
0.5
5
0.39 13
19
0.34 32
44
50
7
3000
0.2
2
0.39 36
53 Photosensitivity
S
(A/W) Spectral
Peak
response sensitivity
range wavelength
λ
λp 0.36
0.43
0.36
0.43
0.36
0.43
0.36
0.43 0.10
0.10
0.10
0.10
-0.12
0.12
0.12
0.12
-www.hamamatsu.com Noise
equivalent
power
NEP (W/Hz1/2)
2.5 × 10-15
2.1 × 10-15
2.5 × 10-15
2.1 × 10-15
5.0 × 10-15
4.2 × 10-15
8.0 × 10-15
6.7 × 10-15 1
S1227 series For UV to visible, precision photometry;
suppressed IR sensitivity
These Si photodiodes have suppressed IR sensitivity. They are suitable for low-light-level detection in analysis and the like. Features Applications High UV sensitivity (quartz window type): QE 75 % (λ=200 nm) Analytical equipment Suppressed IR sensitivity Optical measurement equipment, etc. Low dark current Structure / Absolute maximum ratings Type no. S1227-16BQ*
S1227-16BR
S1227-33BQ*
S1227-33BR
S1227-66BQ*
S1227-66BR
S1227-1010BQ*
S1227-1010BR Package Photosensitive
area size Effective
photosensitive
area (mm) (mm) (mm2) 2.7 × 15 1.1 × 5.9 5.9 6 × 7.6 2.4 × 2.4 5.7 8.9 × 10.1 5.8 × 5.8 33 15 × 16.5 10 × 10 100 Window
material
Quatz
Resin potting
Quatz
Resin potting
Quatz
Resin potting
Quatz
Resin potting Absolute maximum ratings
Operating
Storage
Reverse
temperature
temperature
voltage
Topr
Tstg
VR max
(V)
(°C)
(°C) 5 -20 to +60 -20 to +80 * Refer to “Precautions against UV light exposure.”
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the
product within the absolute maximum ratings. Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted) Type no. 200 nm
λp (nm)
S1227-16BQ 190 to 1000
S1227-16BR
340 to 1000
S1227-33BQ 190 to 1000
S1227-33BR
340 to 1000
S1227-66BQ 190 to 1000
S1227-66BR
340 to 1000
S1227-1010BQ 190 to 1000
S1227-1010BR 340 to 1000 Min. Typ. (nm) 720 Short circuit
Terminal
Dark
Shunt
Rise
current
capacitance resistance
current Temp.
time
Isc
Ct
ID
Rsh
coefficient
tr
100 lx
VR=10 mV TCID
VR=0 V VR=10 mV
VR=0 V
He-Ne Min. Typ. Max.
(GΩ)
RL=1 kΩ f=10 kHz
Laser
633
Min. Typ.
nm (μA) (μA) (pA) (times/°C)
(μs)
(pF)
0.34 2.0 3.2
5
0.5
170
2
20
0.39 2.2 3.7
0.34 2.0 3.0
5
0.5
160
2
20
0.39 2.2 3.7
1.12
0.34 11
16
20
2
950
0.5
5
0.39 13
19
0.34 32
44
50
7
3000
0.2
2
0.39 36
53 Photosensitivity
S
(A/W) Spectral
Peak
response sensitivity
range wavelength
λ
λp 0.36
0.43
0.36
0.43
0.36
0.43
0.36
0.43 0.10
0.10
0.10
0.10
-0.12
0.12
0.12
0.12
-www.hamamatsu.com Noise
equivalent
power
NEP (W/Hz1/2)
2.5 × 10-15
2.1 × 10-15
2.5 × 10-15
2.1 × 10-15
5.0 × 10-15
4.2 × 10-15
8.0 × 10-15
6.7 × 10-15 1