Datasheet S1227 (Hamamatsu) - 4

Si photodiodes S1227 series S1227-66BQ
10.1 ± 0.1 2.0 ± 0.1 8.9 ± 0.1
10.5 0.3 0.65 Resin 0.5
Lead 10.5 0.1 0.75
0.5
Lead 2.0 ± 0.1 Photosensitive
surface Photosensitive
Quartz window
surface 0.3 10.1 ± 0.1 Photosensitive
area
5.8 × 5.8 8.9 ± 0.1 Photosensitive
area
5.8 × 5.8 S1227-66BR 9.2 ± 0.3 9.2 ± 0.3 7.4 ± 0.2 7.4 ± 0.2 Anode
terminal mark
8.0 ± 0.3 8.0 ± 0.3 Anode
terminal mark The resin potting may extend a
maximum of 0.1 mm above the
upper surface of the package.
KSPDA0098EB KSPDA0099EB 16.5 ± 0.2 Photosensitive
area
10 × 10 15.0 ± 0.15 0.5
Lead 15.1 ± 0.3 15.1 ± 0.3
12.5 ± 0.2 12.5 ± 0.2 13.7 ± 0.3 Anode
terminal mark
13.7 ± 0.3 Anode
terminal mark 10.5 0.3 10.5 0.5
Lead 2.15 ± 0.1 Photosensitive
surface
Resin 2.15 ± 0.1 0.1 Quartz window 0.9 0.3 Photosensitive
surface 16.5 ± 0.2 0.8 Photosensitive
area
10 × 10 S1227-1010BR 15.0 ± 0.15 S1227-1010BQ The resin potting may extend a
maximum of 0.1 mm above the
upper surface of the package.
KSPDA0100EB KSPDA0101EB 4