Datasheet IRF520, SiHF520 (Vishay) - 2

IRF520, SiHF520
Vishay Siliconix
THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient RthJA - 62 Case-to-Sink, Flat, Greased Surface RthCS 0.50 - °C/W Maximum Junction-to-Case (Drain) RthJC - 2.5
SPECIFICATIONS
(TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 100 - - V VDS Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 0.13 - V/°C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA VDS = 100 V, VGS = 0 V - - 25 Zero Gate Voltage Drain Current IDSS μA VDS = 80 V, VGS = 0 V, TJ = 150 °C - - 250 Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 5.5 Ab - - 0.27 Forward Transconductance gfs VDS = 50 V, ID = 5.5 Ab 2.7 - - S
Dynamic
Input Capacitance Ciss VGS = 0 V, - 360 - Output Capacitance Coss VDS = 25 V, - 150 - pF Reverse Transfer Capacitance Crss f = 1.0 MHz, see fig. 5 - 34 - Total Gate Charge Qg - - 16 ID = 9.2 A, VDS = 80 V, Gate-Source Charge Qgs VGS = 10 V - - 4.4 nC see fig. 6 and 13b Gate-Drain Charge Qgd - - 7.7 Turn-On Delay Time td(on) - 8.8 - Rise Time tr V - 30 - DD = 50 V, ID = 9.2 A, ns Turn-Off Delay Time td(off) R - 19 - g = 18 , RD = 5.2, see fig. 10b Fall Time tf - 20 - Between lead, D Internal Drain Inductance LD - 4.5 - 6 mm (0.25") from nH package and center of G Internal Source Inductance LS die contact - 7.5 - S
Drain-Source Body Diode Characteristics
MOSFET symbol Continuous Source-Drain Diode Current I D S - - 9.2 showing the G A integral reverse Pulsed Diode Forward Currenta ISM S - - 37 p - n junction diode Body Diode Voltage VSD TJ = 25 °C, IS = 9.2 A, VGS = 0 Vb - - 1.8 V Body Diode Reverse Recovery Time trr - 110 260 ns TJ = 25 °C, IF = 9.2 A, dI/dt = 100 A/μsb Body Diode Reverse Recovery Charge Qrr - 0.53 1.3 μC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width  300 μs; duty cycle  2 %. www.vishay.com Document Number: 91017 2 S11-0511-Rev. B, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000