Datasheet IRF520, SiHF520 (Vishay) - 4
| Hersteller | Vishay |
| Beschreibung | Power MOSFET |
| Seiten / Seite | 9 / 4 — IRF520, SiHF520. Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage |
| Dateiformat / Größe | PDF / 283 Kb |
| Dokumentensprache | Englisch |
IRF520, SiHF520. Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Textversion des Dokuments
IRF520, SiHF520
Vishay Siliconix 750 V 101 GS = 0 V, f = 1 MHz C = C + C , C Shorted 175 °C iss gs gd ds 600 C = C rss gd C = C + C oss ds gd 450 Ciss 25 °C ain Current (A) 100 300 Coss erse Dr Capacitance (pF) v 150 , Re Crss I SD V = 0 V GS 0 10-1 100 101 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 91017_05 VDS, Drain-to-Source Voltage (V) 91017_07 VSD, Source-to-Drain Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage
20 103 I = 9.2 A D Operation in this area limited 5 by R V DS(on) = 80 V 16 DS 2 ltage (V) V = 50 V 102 DS o V 5 V = 20 V 10 µs 12 DS 2 100 µs 10 5 1 ms 8 ain Current (A) , Dr 2 10 ms I D 1 , Gate-to-Source 4 5 T = 25
°
C GS C V For test circuit T = 175
°
C 2 J see figure 13 Single Pulse 0 0.1 2 5 2 5 2 5 0 4 8 12 16 20 0.1 1 10 102 2 5 103 91017_06 Q 91017_08 V G, Total Gate Charge (nC) DS, Drain-to-Source Voltage (V)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 8 - Maximum Safe Operating Area
www.vishay.com Document Number: 91017 4 S11-0511-Rev. B, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Vishay Siliconix 750 V 101 GS = 0 V, f = 1 MHz C = C + C , C Shorted 175 °C iss gs gd ds 600 C = C rss gd C = C + C oss ds gd 450 Ciss 25 °C ain Current (A) 100 300 Coss erse Dr Capacitance (pF) v 150 , Re Crss I SD V = 0 V GS 0 10-1 100 101 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 91017_05 VDS, Drain-to-Source Voltage (V) 91017_07 VSD, Source-to-Drain Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage
20 103 I = 9.2 A D Operation in this area limited 5 by R V DS(on) = 80 V 16 DS 2 ltage (V) V = 50 V 102 DS o V 5 V = 20 V 10 µs 12 DS 2 100 µs 10 5 1 ms 8 ain Current (A) , Dr 2 10 ms I D 1 , Gate-to-Source 4 5 T = 25
°
C GS C V For test circuit T = 175
°
C 2 J see figure 13 Single Pulse 0 0.1 2 5 2 5 2 5 0 4 8 12 16 20 0.1 1 10 102 2 5 103 91017_06 Q 91017_08 V G, Total Gate Charge (nC) DS, Drain-to-Source Voltage (V)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 8 - Maximum Safe Operating Area
www.vishay.com Document Number: 91017 4 S11-0511-Rev. B, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000