Datasheet IRF520, SiHF520 (Vishay)
| Hersteller | Vishay |
| Beschreibung | Power MOSFET |
| Seiten / Seite | 9 / 1 — IRF520, SiHF520. Power MOSFET. FEATURES. PRODUCT SUMMARY. RoHS*. … |
| Dateiformat / Größe | PDF / 283 Kb |
| Dokumentensprache | Englisch |
IRF520, SiHF520. Power MOSFET. FEATURES. PRODUCT SUMMARY. RoHS*. COMPLIANT. TO-220AB. DESCRIPTION. ORDERING INFORMATION
Textversion des Dokuments
IRF520, SiHF520
Vishay Siliconix
Power MOSFET FEATURES PRODUCT SUMMARY
• Dynamic dV/dt Rating VDS (V) 100 • Repetitive Avalanche Rated Available RDS(on) () VGS = 10 V 0.27 • 175 °C Operating Temperature
RoHS*
Qg (Max.) (nC) 16
COMPLIANT
• Fast Switching Qgs (nC) 4.4 • Ease of Paralleling Qgd (nC) 7.7 • Simple Drive Requirements Configuration Single • Compliant to RoHS Directive 2002/95/EC D
TO-220AB DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and G cost-effectiveness. The TO-220AB package is universally preferred for all S commercial-industrial applications at power dissipation D G S levels to approximately 50 W. The low thermal resistance N-Channel MOSFET and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.
ORDERING INFORMATION
Package TO-220AB IRF520PbF Lead (Pb)-free SiHF520-E3 IRF520 SnPb SiHF520
ABSOLUTE MAXIMUM RATINGS
(TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ± 20 TC = 25 °C 9.2 Continuous Drain Current VGS at 10 V ID TC = 100 °C 6.5 A Pulsed Drain Currenta IDM 37 Linear Derating Factor 0.40 W/°C Single Pulse Avalanche Energyb EAS 200 mJ Repetitive Avalanche Currenta IAR 9.2 A Repetitive Avalanche Energya EAR 6.0 mJ Maximum Power Dissipation TC = 25 °C PD 60 W Peak Diode Recovery dV/dtc dV/dt 5.5 V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 175 °C Soldering Recommendations (Peak Temperature) for 10 s 300d 10 lbf · in Mounting Torque 6-32 or M3 screw 1.1 N · m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25 V, starting TJ = 25 °C, L = 3.5 mH, Rg = 25 , IAS = 9.2 A (see fig. 12). c. ISD 9.2 A, dI/dt 110 A/μs, VDD VDS, TJ 175 °C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91017 www.vishay.com S11-0511-Rev. B, 21-Mar-11 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Vishay Siliconix
Power MOSFET FEATURES PRODUCT SUMMARY
• Dynamic dV/dt Rating VDS (V) 100 • Repetitive Avalanche Rated Available RDS(on) () VGS = 10 V 0.27 • 175 °C Operating Temperature
RoHS*
Qg (Max.) (nC) 16
COMPLIANT
• Fast Switching Qgs (nC) 4.4 • Ease of Paralleling Qgd (nC) 7.7 • Simple Drive Requirements Configuration Single • Compliant to RoHS Directive 2002/95/EC D
TO-220AB DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and G cost-effectiveness. The TO-220AB package is universally preferred for all S commercial-industrial applications at power dissipation D G S levels to approximately 50 W. The low thermal resistance N-Channel MOSFET and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.
ORDERING INFORMATION
Package TO-220AB IRF520PbF Lead (Pb)-free SiHF520-E3 IRF520 SnPb SiHF520
ABSOLUTE MAXIMUM RATINGS
(TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ± 20 TC = 25 °C 9.2 Continuous Drain Current VGS at 10 V ID TC = 100 °C 6.5 A Pulsed Drain Currenta IDM 37 Linear Derating Factor 0.40 W/°C Single Pulse Avalanche Energyb EAS 200 mJ Repetitive Avalanche Currenta IAR 9.2 A Repetitive Avalanche Energya EAR 6.0 mJ Maximum Power Dissipation TC = 25 °C PD 60 W Peak Diode Recovery dV/dtc dV/dt 5.5 V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 175 °C Soldering Recommendations (Peak Temperature) for 10 s 300d 10 lbf · in Mounting Torque 6-32 or M3 screw 1.1 N · m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25 V, starting TJ = 25 °C, L = 3.5 mH, Rg = 25 , IAS = 9.2 A (see fig. 12). c. ISD 9.2 A, dI/dt 110 A/μs, VDD VDS, TJ 175 °C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91017 www.vishay.com S11-0511-Rev. B, 21-Mar-11 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000