Datasheet 2N5486 (ON Semiconductor) - 2
| Hersteller | ON Semiconductor |
| Beschreibung | JFET VHF/UHF Amplifiers |
| Seiten / Seite | 6 / 2 — 2N5486. ELECTRICAL CHARACTERISTICS. Characteristic. Symbol. Min. Typ. … |
| Dateiformat / Größe | PDF / 150 Kb |
| Dokumentensprache | Englisch |
2N5486. ELECTRICAL CHARACTERISTICS. Characteristic. Symbol. Min. Typ. Max. Unit. OFF CHARACTERISTICS. ON CHARACTERISTICS
Textversion des Dokuments
2N5486 ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS
Gate−Source Breakdown Voltage (IG = −1.0 mAdc, VDS = 0) V(BR)GSS −25 − − Vdc Gate Reverse Current (VGS = −20 Vdc, VDS = 0) IGSS − − −1.0 nAdc (VGS = −20 Vdc, VDS = 0, TA = 100°C) − − −0.2 mAdc Gate Source Cutoff Voltage (VDS = 15 Vdc, ID = 10 nAdc) VGS(off) −2.0 − −6.0 Vdc
ON CHARACTERISTICS
Zero−Gate Voltage Drain Current (VDS = 15 Vdc, VGS = 0) IDSS 8.0 − 20 mAdc
SMALL− SIGNAL CHARACTERISTICS
Forward Transfer Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) ⎪yfs⎪ 4000 − 8000 mmhos Input Admittance (VDS = 15 Vdc, VGS = 0, f = 400 MHz) Re(yis) − − 1000 mmhos Output Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) ⎪yos⎪ − − 75 mmhos Output Conductance (VDS = 15 Vdc, VGS = 0, f = 400 MHz) Re(yos) − − 100 mmhos Forward Transconductance (VDS = 15 Vdc, VGS = 0, f = 400 MHz) Re(yfs) 3500 − − mmhos Input Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Ciss − − 5.0 pF Reverse Transfer Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Crss − − 1.0 pF Output Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Coss − − 2.0 pF
COMMON SOURCE CHARACTERISTICS ADMITTANCE PARAMETERS
(VDS = 15 Vdc, Tchannel = 25°C) 30 5.0 20 3.0 (mmhos) 2.0 10 bis @ IDSS (mmhos) (mmhos) ANCE brs @ IDSS 7.0 ANCE (mmhos) 1.0 ANCE ANCE 5.0 0.7 0.25 I 3.0 DSS g 0.5 is @ IDSS 2.0 0.3 CONDUCT SUSCEPT TRANSADMITT gis @ 0.25 IDSS 0.2 1.0 , INPUT , INPUT is is 0.7 , REVERSE SUSCEPT g b rs 0.1 0.5 , REVERSE b g b rs rs @ IDSS, 0.25 IDSS is @ 0.25 IDSS g 0.07 0.3 0.05 10 20 30 50 70 100 200 300 500 700 1000 10 20 30 50 70 100 200 300 500 700 1000 f, FREQUENCY (MHz) f, FREQUENCY (MHz)
Figure 1. Input Admittance (yis) Figure 2. Reverse Transfer Admittance (yrs)
20 10 (mmhos) 5.0 10 (mmhos) 7.0 g 2.0 b ANCE fs @ IDSS os @ IDSS and 0.25 IDSS 5.0 ANCE ANCE (mhos) 1.0 ANCE (mhos) 3.0 gfs @ 0.25 IDSS 0.5 2.0 SUSCEPT ADMITT SUSCEPT 0.2 gos @ IDSS TRANSCONDUCT ARD 1.0 |b 0.1 W fs| @ IDSS ARD 0.7 , OUTPUT W 0.05 0.5 , OUTPUT |, FOR os |bfs| @ 0.25 IDSS os fs g b gos @ 0.25 IDSS , FOR |b 0.3 0.02 fsg 0.2 0.01 10 20 30 50 70 100 200 300 500 700 1000 10 20 30 50 70 100 200 300 500 700 1000 f, FREQUENCY (MHz) f, FREQUENCY (MHz)
Figure 3. Forward Transadmittance (yfs) Figure 4. Output Admittance (yos) http://onsemi.com 2
(TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS
Gate−Source Breakdown Voltage (IG = −1.0 mAdc, VDS = 0) V(BR)GSS −25 − − Vdc Gate Reverse Current (VGS = −20 Vdc, VDS = 0) IGSS − − −1.0 nAdc (VGS = −20 Vdc, VDS = 0, TA = 100°C) − − −0.2 mAdc Gate Source Cutoff Voltage (VDS = 15 Vdc, ID = 10 nAdc) VGS(off) −2.0 − −6.0 Vdc
ON CHARACTERISTICS
Zero−Gate Voltage Drain Current (VDS = 15 Vdc, VGS = 0) IDSS 8.0 − 20 mAdc
SMALL− SIGNAL CHARACTERISTICS
Forward Transfer Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) ⎪yfs⎪ 4000 − 8000 mmhos Input Admittance (VDS = 15 Vdc, VGS = 0, f = 400 MHz) Re(yis) − − 1000 mmhos Output Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz) ⎪yos⎪ − − 75 mmhos Output Conductance (VDS = 15 Vdc, VGS = 0, f = 400 MHz) Re(yos) − − 100 mmhos Forward Transconductance (VDS = 15 Vdc, VGS = 0, f = 400 MHz) Re(yfs) 3500 − − mmhos Input Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Ciss − − 5.0 pF Reverse Transfer Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Crss − − 1.0 pF Output Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Coss − − 2.0 pF
COMMON SOURCE CHARACTERISTICS ADMITTANCE PARAMETERS
(VDS = 15 Vdc, Tchannel = 25°C) 30 5.0 20 3.0 (mmhos) 2.0 10 bis @ IDSS (mmhos) (mmhos) ANCE brs @ IDSS 7.0 ANCE (mmhos) 1.0 ANCE ANCE 5.0 0.7 0.25 I 3.0 DSS g 0.5 is @ IDSS 2.0 0.3 CONDUCT SUSCEPT TRANSADMITT gis @ 0.25 IDSS 0.2 1.0 , INPUT , INPUT is is 0.7 , REVERSE SUSCEPT g b rs 0.1 0.5 , REVERSE b g b rs rs @ IDSS, 0.25 IDSS is @ 0.25 IDSS g 0.07 0.3 0.05 10 20 30 50 70 100 200 300 500 700 1000 10 20 30 50 70 100 200 300 500 700 1000 f, FREQUENCY (MHz) f, FREQUENCY (MHz)
Figure 1. Input Admittance (yis) Figure 2. Reverse Transfer Admittance (yrs)
20 10 (mmhos) 5.0 10 (mmhos) 7.0 g 2.0 b ANCE fs @ IDSS os @ IDSS and 0.25 IDSS 5.0 ANCE ANCE (mhos) 1.0 ANCE (mhos) 3.0 gfs @ 0.25 IDSS 0.5 2.0 SUSCEPT ADMITT SUSCEPT 0.2 gos @ IDSS TRANSCONDUCT ARD 1.0 |b 0.1 W fs| @ IDSS ARD 0.7 , OUTPUT W 0.05 0.5 , OUTPUT |, FOR os |bfs| @ 0.25 IDSS os fs g b gos @ 0.25 IDSS , FOR |b 0.3 0.02 fsg 0.2 0.01 10 20 30 50 70 100 200 300 500 700 1000 10 20 30 50 70 100 200 300 500 700 1000 f, FREQUENCY (MHz) f, FREQUENCY (MHz)
Figure 3. Forward Transadmittance (yfs) Figure 4. Output Admittance (yos) http://onsemi.com 2