Datasheet 2N5486 (ON Semiconductor) - 4

2N5486 COMMON GATE CHARACTERISTICS ADMITTANCE PARAMETERS
(VDG = 15 Vdc, Tchannel = 25°C) 20 0.5 0.3 10 (mmhos) 0.2 brg @ IDSS 7.0 gig @ IDSS (mmhos) (mmhos) 5.0 ANCE ANCE (mmhos) 0.1 ANCE ANCE 3.0 grg @ 0.25 IDSS 0.07 2.0 0.05 0.25 I 0.03 DSS CONDUCT SUSCEPT TRANSADMITT 1.0 0.02 0.7 , INPUT , INPUT 0.5 b ig ig ig @ IDSS , REVERSE SUSCEPT g b big @ 0.25 IDSS , REVERSE rg 0.01 b g 0.3 rg ig @ IDSS, 0.25 IDSS g 0.007 0.2 0.005 10 20 30 50 70 100 200 300 500 700 1000 10 20 30 50 70 100 200 300 500 700 1000 f, FREQUENCY (MHz) f, FREQUENCY (MHz)
Figure 9. Input Admittance (yig) Figure 10. Reverse Transfer Admittance (yrg)
10 1.0 7.0 gfg @ IDSS 0.7 b (mmhos) og @ IDSS, 0.25 IDSS 5.0 0.5 (mmhos) ANCE 3.0 g 0.3 fg @ 0.25 IDSS ANCE 2.0 ANCE (mmhos) 0.2 ANCE (mmhos) 1.0 0.1 SUSCEPT ADMITT 0.7 SUSCEPT 0.07 TRANSCONDUCT ARD 0.5 0.05 gog @ IDSS W b ARD 0.3 fg @ IDSS , OUTPUT 0.03 W , OUTPUT , FOR og b og fg 0.2 rg @ 0.25 IDSS g b 0.02 b , FOR gog @ 0.25 IDSS fgg 0.1 0.01 10 20 30 50 70 100 200 300 500 700 1000 10 20 30 50 70 100 200 300 500 700 1000 f, FREQUENCY (MHz) f, FREQUENCY (MHz)
Figure 11. Forward Transfer Admittance (yfg) Figure 12. Output Admittance (yog) http://onsemi.com 4