Datasheet IRF530N (International Rectifier) - 6
| Hersteller | International Rectifier |
| Beschreibung | HEXFET Power MOSFET |
| Seiten / Seite | 9 / 6 — Fig 12a. Fig 12c. Fig 12b. Fig 13a. Fig 13b |
| Dateiformat / Größe | PDF / 222 Kb |
| Dokumentensprache | Englisch |
Fig 12a. Fig 12c. Fig 12b. Fig 13a. Fig 13b
Textversion des Dokuments
IRF530N 200 1 5V L D R IV E R V D S ID TOP 3.7A 6.4A 160 BOTTOM 9.0A R G D .U .T + 120 V - D D IA S A 2 0 V V GS t 0 .0 1 p Ω 80
Fig 12a.
Unclamped Inductive Test Circuit 40 V (B R )D SS tp ASE , Single Pulse Avalanche Energy (mJ) 0 25 50 75 100 125 150 175 Starting T , Junction Temperature ( C) ° J
Fig 12c.
Maximum Avalanche Energy Vs. Drain Current I AS
Fig 12b.
Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ .2µF 12V QG .3µF + VGS V D.U.T. DS - QGS QGD VGS VG 3mA I I G D Charge Current Sampling Resistors
Fig 13a.
Basic Gate Charge Waveform
Fig 13b.
Gate Charge Test Circuit 6 www.irf.com
Fig 12a.
Unclamped Inductive Test Circuit 40 V (B R )D SS tp ASE , Single Pulse Avalanche Energy (mJ) 0 25 50 75 100 125 150 175 Starting T , Junction Temperature ( C) ° J
Fig 12c.
Maximum Avalanche Energy Vs. Drain Current I AS
Fig 12b.
Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ .2µF 12V QG .3µF + VGS V D.U.T. DS - QGS QGD VGS VG 3mA I I G D Charge Current Sampling Resistors
Fig 13a.
Basic Gate Charge Waveform
Fig 13b.
Gate Charge Test Circuit 6 www.irf.com