Datasheet IRF530N (International Rectifier) - 5
| Hersteller | International Rectifier |
| Beschreibung | HEXFET Power MOSFET |
| Seiten / Seite | 9 / 5 — Fig 10a. Fig 9. Fig 10b. Fig 11 |
| Dateiformat / Größe | PDF / 222 Kb |
| Dokumentensprache | Englisch |
Fig 10a. Fig 9. Fig 10b. Fig 11
Textversion des Dokuments
IRF530N 20 RD VDS V 16 GS D.U.T. RG + -VDD 12 VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 8 I , Drain Current (A) D
Fig 10a.
Switching Time Test Circuit 4 VDS 90% 0 25 50 75 100 125 150 175 T , Case Temperature ( C) ° C 10% V
Fig 9.
Maximum Drain Current Vs. GS t Case Temperature d(on) tr td(off) tf
Fig 10b.
Switching Time Waveforms 10 thJC (Z ) D = 0.50 1 0.20 0.10 0.05 DM 0.1 0.02 SINGLE PULSE 0.01 (THERMAL RESPONSE) Thermal Response P t1 t 2 Notes: 1. Duty factor D = t / t 1 2 2. Peak T = P x Z + T J DM thJC C 0.01 0.00001 0.0001 0.001 0.01 0.1 t , Rectangular Pulse Duration (sec) 1
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5
Fig 10a.
Switching Time Test Circuit 4 VDS 90% 0 25 50 75 100 125 150 175 T , Case Temperature ( C) ° C 10% V
Fig 9.
Maximum Drain Current Vs. GS t Case Temperature d(on) tr td(off) tf
Fig 10b.
Switching Time Waveforms 10 thJC (Z ) D = 0.50 1 0.20 0.10 0.05 DM 0.1 0.02 SINGLE PULSE 0.01 (THERMAL RESPONSE) Thermal Response P t1 t 2 Notes: 1. Duty factor D = t / t 1 2 2. Peak T = P x Z + T J DM thJC C 0.01 0.00001 0.0001 0.001 0.01 0.1 t , Rectangular Pulse Duration (sec) 1
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5