Datasheet IGB110S101 (Infineon) - 4
| Hersteller | Infineon |
| Beschreibung | The IGB110S101 is a 100 V normally-off e-mode power transistor housed in a small PQFN 3x3 package, enabling high power density designs |
| Seiten / Seite | 18 / 4 — Public. IGB110S101. 2 Recommended operating conditions. … |
| Revision | 01_00 |
| Dateiformat / Größe | PDF / 1.2 Mb |
| Dokumentensprache | Englisch |
Public. IGB110S101. 2 Recommended operating conditions. Table 3 Recommended operating conditions
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CoolGaNT MTransistor 100 V G3
IGB110S101 2 Recommended operating conditions Table 3 Recommended operating conditions
Values Parameter Symbol Unit Note / Test condition Min. Typ. Max. Gate‑source voltage VGS ‑4.0 5.0 5.5 V ‑ Datasheet Revision 1.1 https://www.infineon.com 4 2025‑04‑22 Document Outline Description Maximum ratings Recommended operating conditions Thermal characteristics Electrical Characteristics Electrical characteristics diagrams Package outlines Appendix A Revision history Trademarks Disclaimer
CoolGaNT MTransistor 100 V G3
IGB110S101 2 Recommended operating conditions Table 3 Recommended operating conditions
Values Parameter Symbol Unit Note / Test condition Min. Typ. Max. Gate‑source voltage VGS ‑4.0 5.0 5.5 V ‑ Datasheet Revision 1.1 https://www.infineon.com 4 2025‑04‑22 Document Outline Description Maximum ratings Recommended operating conditions Thermal characteristics Electrical Characteristics Electrical characteristics diagrams Package outlines Appendix A Revision history Trademarks Disclaimer