Datasheet IGB110S101 (Infineon)

HerstellerInfineon
BeschreibungThe IGB110S101 is a 100 V normally-off e-mode power transistor housed in a small PQFN 3x3 package, enabling high power density designs
Seiten / Seite18 / 1 — Public. IGB110S101. Final datasheet. Features. Potential applications. …
Revision01_00
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DokumentenspracheEnglisch

Public. IGB110S101. Final datasheet. Features. Potential applications. Product validation

Datasheet IGB110S101 Infineon, Revision: 01_00

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Public IGB110S101 Final datasheet
CoolGaNTM PG‑VSON‑4 CoolGaNT  MTransistor 100 V G3
Features
•  Ultra fast switching and high efficiency 3 •  Space saving and highly robust package 2 •  No reverse recovery charge 4 1 •  Ultra low gate charge and output charge •  Moisture rating MSL1 •  Industrial grade 3x3 package
Potential applications
Dr D ai a n Pi P n 2 •  Telecom & Datacenter 48V IBC •  Sync Rectification for AC‑DC and DC‑DC converters Gat a e t •  Robotics and drones Pi P n 1 •  Battery powered tools •  48V servo drive Sour u ce •  e‑Mobility, UAVs Pi P n 3 3 - 4 •  Class D Audio •  Solar & Energy storage systems •  Point of Load Converters
Product validation
Qualified for industrial applications according to the relevant tests of  JEDEC JESD47, JESD22 and J‑STD‑020.    
Table 1        Key performance parameters
Parameter Value Unit   VDS 100 V RDS(on) 9.4 mΩ ID 23 A Qoss 14 nC QG 3.4 nC Qrr 0 nC Part number Package Marking Related links IGB110S101 PG‑VSON‑4 BA1 see Appendix A Datasheet Revision 1.1 https://www.infineon.com 1 2025‑04‑22 Document Outline Description Maximum ratings Recommended operating conditions Thermal characteristics Electrical Characteristics Electrical characteristics diagrams Package outlines Appendix A Revision history Trademarks Disclaimer