Datasheet LM389 (National Semiconductor) - 2

Absolute Maximum Ratings If Military/Aerospace specified devices are required, Collector to Base Voltage, VCBO 15V please contact the National Semiconductor Sales Collector to Substrate Voltage, VCIO Office/Distributors for availability and specifications. (Note 2) 15V Supply Voltage 15V Collector Current, IC 25 mA Package Dissipation (Note 1) 1.89W Emitter Current, IE 25 mA Input Voltage g 0.4V Base Current, IB 5 mA Storage Temperature b65§C to a150§C Power Dissipation (Each Transistor) TA s a70§C 150 mW Operating Temperature 0§C to a70§C Thermal Resistance Junction Temperature 150§C iJC 24§C/W Lead Temperature (Soldering, 10 sec.) 260§C iJA 70§C/W Collector to Emitter Voltage, VCEO 12V Electrical Characteristics TA e 25§C Symbol Parameter Conditions Min Typ Max Units AMPLIFIER VS Operating Supply Voltage 4 12 V IQ Quiescent Current VS e 6V, VIN e 0V 6 12 mA POUT Output Power (Note 3) V THD S e 6V, RL e 8X 250 325 mW e 10% VS e 9V, RL e 16X 500 mW AV Voltage Gain VS e 6V, f e 1 kHz 23 26 30 dB 10 mF from Pins 4 to 12 46 dB BW Bandwidth VS e 6V, Pins 4 and 12 Open 250 kHz THD Total Harmonic Distortion VS e 6V, RL e 8X, POUT e 125 mW, 0.2 3.0 % f e 1 kHz, Pins 4 and 12 Open PSRR Power Supply Rejection Ratio VS e 6V, f e 1 kHz, CBYPASS e 10 mF, 30 50 dB Pins 4 and 12 Open, Referred to Output RIN Input Resistance 10 50 kX IBIAS Input Bias Current VS e 6V, Pins 5 and 16 Open 250 nA TRANSISTORS VCEO Collector to Emitter IC e 1 mA, IB e 0 12 20 V Breakdown Voltage VCBO Collector to Base IC e 10 mA, IE e 0 15 40 V Breakdown Voltage VCIO Collector to Substrate IC e 10 mA, IE e IB e 0 15 40 V Breakdown Voltage VEBO Emitter to Base IE e 10 mA, IC e 0 6.4 7.1 7.8 V Breakdown Voltage HFE Static Forward Current IC e 10 mA 100 Transfer Ratio (Static Beta) IC e 1 mA 100 275 IC e 10 mA 275 hoe Open-Circuit Output Admittance IC e 1 mA, VCE e 5V, f e 1.0 kHz 20 mmho VBE Base to Emitter Voltage IE e 1 mA 0.7 0.85 V lVBE1–VBE2l Base to Emitter Voltage Offset IE e 1 mA 1 5 mV VCESAT Collector to Emitter IC e 10 mA, IB e 1 mA 0.15 0.5 V Saturation Voltage CEB Emitter to Base Capacitance VEB e 3V 1.5 pF CCB Collector to Base Capacitance VCB e 3V 2 pF CCI Collector to Substrate VCI e 3V 3.5 pF Capacitance hfe High Frequency Current Gain IC e 10 mA, VCE e 5V, f e 100 MHz 1.5 5.5 Note 1: For operation in ambient temperatures above 25§C, the device must be derated based on a 150§C maximum junction temperature and a thermal resistance of 66§C/W junction to ambient. Note 2: The collector of each transistor is isolated from the substrate by an integral diode. Therefore, the collector voltage should remain positive with respect to pin 17 at all times. Note 3: If oscillation exists under some load conditions, add 2.7X and 0.05 mF series network from pin 1 to ground. 2