Datasheet MTP20N20E (ON Semiconductor) - 3
| Hersteller | ON Semiconductor |
| Beschreibung | Power MOSFET 20 Amps, 200 Volts |
| Seiten / Seite | 9 / 3 — MTP20N20E. ELECTRICAL CHARACTERISTICS. Characteristic. Symbol. Min. Typ. … |
| Dateiformat / Größe | PDF / 306 Kb |
| Dokumentensprache | Englisch |
MTP20N20E. ELECTRICAL CHARACTERISTICS. Characteristic. Symbol. Min. Typ. Max. Unit. OFF CHARACTERISTICS. ON CHARACTERISTICS
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MTP20N20E ELECTRICAL CHARACTERISTICS
(TJ = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS
Drain−Source Breakdown Voltage V(BR)DSS (VGS = 0 Vdc, ID = 250 µAdc) 200 − − Vdc Temperature Coefficient (Positive) − 263 − mV/°C Zero Gate Voltage Drain Current IDSS µAdc (VDS = 200 Vdc, VGS = 0 Vdc) − − 10 (VDS = 200 Vdc, VGS = 0 Vdc, TJ = 125°C) − − 100 Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0) IGSS − − 100 nAdc
ON CHARACTERISTICS
(Note 1.) Gate Threshold Voltage VGS(th) (VDS = VGS, ID = 250 µAdc) 2.0 − 4.0 Vdc Temperature Coefficient (Negative) − 7.0 − mV/°C Static Drain−Source On−Resistance (VGS = 10 Vdc, ID = 10 Adc) RDS(on) − 0.12 0.16 Ohm Drain−Source On−Voltage (VGS = 10 Vdc) VDS(on) Vdc (ID = 20 Adc) − − 3.84 (ID = 10 Adc, TJ = 125°C) − − 3.36 Forward Transconductance (VDS = 13 Vdc, ID = 10 Adc) gFS 8.0 11 − mhos
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss − 1880 2700 pF (V 25 Vd V 0 Vd Output Capacitance (VDS = 25 Vdc, VGS = 0 Vdc, C f = 1.0 MHz f = 1. ) oss − 378 535 0 MHz) Reverse Transfer Capacitance Crss − 68 100
SWITCHING CHARACTERISTICS
(Note 2.) Turn−On Delay Time td(on) − 17 40 ns Rise Time (VDD = 100 Vdc, ID = 20 Adc, tr − 86 180 VGS V = 10 Vdc = 10 Vdc, Turn−Off Delay Time RG = 9.1 G Ω 9.1 ) t Ω) d(off) − 50 100 Fall Time tf − 60 120 Gate Charge QT − 54 75 nC (See Fig e 8) (See Figure 8) (VDS = 160 Vdc, ID = 20 Adc, Q1 − 12 − (VDS 160 Vdc, ID 20 Adc, VGS = 10 Vdc) Q2 − 24 − Q3 − 22 −
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage (Note 1.) (I VSD Vdc S = 20 Adc, VGS = 0 Vdc) (I − 1.0 1.35 S = 20 Adc, VGS = 0 Vdc, TJ = 125°C) − 0.82 − Reverse Recovery Time trr − 239 − ns (See Fig re 14) (See Figure 14) ta − 136 − (IS 20 Adc V = 20 Adc, VGS 0 Vdc = 0 Vdc, dIS dI /dt = 100 A/µ /dt = 100 A/ s) tb − 103 − µs) Reverse Recovery Stored QRR − 2.09 − µC Charge
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance LD nH (Measured from contact screw on tab to center of die) − 3.5 − (Measured from the drain lead 0.25″ from package to center of die) − 4.5 − Internal Source Inductance LS − 7.5 − nH (Measured from the source lead 0.25″ from package to source bond pad) 1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. 2. Switching characteristics are independent of operating junction temperature.
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MTP20N20E ELECTRICAL CHARACTERISTICS
(TJ = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS
Drain−Source Breakdown Voltage V(BR)DSS (VGS = 0 Vdc, ID = 250 µAdc) 200 − − Vdc Temperature Coefficient (Positive) − 263 − mV/°C Zero Gate Voltage Drain Current IDSS µAdc (VDS = 200 Vdc, VGS = 0 Vdc) − − 10 (VDS = 200 Vdc, VGS = 0 Vdc, TJ = 125°C) − − 100 Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0) IGSS − − 100 nAdc
ON CHARACTERISTICS
(Note 1.) Gate Threshold Voltage VGS(th) (VDS = VGS, ID = 250 µAdc) 2.0 − 4.0 Vdc Temperature Coefficient (Negative) − 7.0 − mV/°C Static Drain−Source On−Resistance (VGS = 10 Vdc, ID = 10 Adc) RDS(on) − 0.12 0.16 Ohm Drain−Source On−Voltage (VGS = 10 Vdc) VDS(on) Vdc (ID = 20 Adc) − − 3.84 (ID = 10 Adc, TJ = 125°C) − − 3.36 Forward Transconductance (VDS = 13 Vdc, ID = 10 Adc) gFS 8.0 11 − mhos
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss − 1880 2700 pF (V 25 Vd V 0 Vd Output Capacitance (VDS = 25 Vdc, VGS = 0 Vdc, C f = 1.0 MHz f = 1. ) oss − 378 535 0 MHz) Reverse Transfer Capacitance Crss − 68 100
SWITCHING CHARACTERISTICS
(Note 2.) Turn−On Delay Time td(on) − 17 40 ns Rise Time (VDD = 100 Vdc, ID = 20 Adc, tr − 86 180 VGS V = 10 Vdc = 10 Vdc, Turn−Off Delay Time RG = 9.1 G Ω 9.1 ) t Ω) d(off) − 50 100 Fall Time tf − 60 120 Gate Charge QT − 54 75 nC (See Fig e 8) (See Figure 8) (VDS = 160 Vdc, ID = 20 Adc, Q1 − 12 − (VDS 160 Vdc, ID 20 Adc, VGS = 10 Vdc) Q2 − 24 − Q3 − 22 −
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage (Note 1.) (I VSD Vdc S = 20 Adc, VGS = 0 Vdc) (I − 1.0 1.35 S = 20 Adc, VGS = 0 Vdc, TJ = 125°C) − 0.82 − Reverse Recovery Time trr − 239 − ns (See Fig re 14) (See Figure 14) ta − 136 − (IS 20 Adc V = 20 Adc, VGS 0 Vdc = 0 Vdc, dIS dI /dt = 100 A/µ /dt = 100 A/ s) tb − 103 − µs) Reverse Recovery Stored QRR − 2.09 − µC Charge
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance LD nH (Measured from contact screw on tab to center of die) − 3.5 − (Measured from the drain lead 0.25″ from package to center of die) − 4.5 − Internal Source Inductance LS − 7.5 − nH (Measured from the source lead 0.25″ from package to source bond pad) 1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. 2. Switching characteristics are independent of operating junction temperature.
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