Datasheet LM4040 (Diodes) - 4
| Hersteller | Diodes |
| Beschreibung | Precision Micropower Shunt Voltage References |
| Seiten / Seite | 16 / 4 — LM4040. Electrical Characteristics. LM4040-41. Conditions. Symbol. … |
| Dateiformat / Größe | PDF / 1.6 Mb |
| Dokumentensprache | Englisch |
LM4040. Electrical Characteristics. LM4040-41. Conditions. Symbol. Parameter. Typ. B Limits C Limits D Limits. Units. LM4040-50
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LM4040 Electrical Characteristics
(cont.) (@TA = +25°C, unless otherwise specified.)
LM4040-41 Conditions Symbol Parameter Typ B Limits C Limits D Limits Units TA
Reverse Breakdown Voltage IR = 100µA +25°C 4.096 — — — V +25°C ±8.2 ±20 ±41 VREF Reverse Breakdown Voltage Tolerance IR = 100µA -40 to +85°C — ±35 ±47 ±81 mV -40 to +125°C ±49 ±60 ±102 +25°C 50 83 83 83 IRMIN Minimum Operating Current — -40 to +85°C 88 88 88 µA — -40 to +125°C 88 88 88 IR = 10mA ±30 — — — — ΔVR/ΔT Average Reverse Breakdown Voltage Temperature Coefficient IR = 1mA -40 to +125°C ±20 ±100 ±100 ±150 ppm/°C IR = 100µA ±20 — — — — +25°C 0.5 0.9 0.9 1.2 IRMIN IR -40 to +85°C 1.2 1.2 1.5 < 1mA — -40 to +125°C 1.2 1.2 1.5 ΔVR/ΔIR Reverse Breakdown Change With Current mV +25°C 3 7 7 9 1mA < IR -40 to +85°C 10 10 13 < 15mA — -40 to +125°C 10 10 13 ZR Dynamic Output Impedance IR = 1mA, f = 120Hz, 0.5 1 1 1.3 Ω IAC = 0.1IR en Noise Voltage IR = 100µA, 10Hz < f < 10kHz 64 — — — µVRMS VR Long Term Stability (Non-Cumulative) t = 1000Hrs, IR = 100µA 120 — — — ppm VHYST Thermal Hysteresis ΔT = -40°C to = +125°C 0.08 80 %
Electrical Characteristics
(cont.) (Test conditions: TA = +25°C, unless otherwise specified.)
LM4040-50 Conditions Typ LM4040 LM4040 LM4040 Symbol Parameter B Limits C Limits D Limits Units
—
TA
Reverse Breakdown Voltage IR = 100µA +25°C 5.0 — — — V V +25°C ±10 ±25 ±50 REF Reverse Breakdown Voltage Tolerance IR = 100µA -40 to +85°C — ±43 ±58 ±99 mV -40 to +125°C ±60 ±75 ±125 +25°C 54 74 74 79 IRMIN Minimum Operating Current — -40 to +85°C µA — 80 80 85 -40 to +125°C 83 83 88 IR = 10mA ±30 — — — ΔVR/ΔT Average Reverse Breakdown Voltage Temperature Coefficient IR = 1mA -40 to +125°C ±20 ±100 ±100 ±150 ppm/°C IR = 100µA ±20 — — — +25°C 0.5 1.0 1.0 1.3 IRMIN ≤ IR ≤ 1mA -40 to +85°C — 1.4 1.4 1.8 -40 to +125°C 1.4 1.4 1.8 ΔVR/ΔIR Reverse Breakdown Change with Current mV +25°C 3.5 8.0 8.0 10.0 1mA ≤ IR ≤ 15mA -40 to +85°C — 12.0 12.0 15.0 -40 to +125°C 12.0 12.0 15.0 ZR Dynamic Output Impedance IR = 1mA, f = 120Hz 0.5 1.1 1.1 1.5 Ω IAC = 0.1IR en Noise Voltage IR = 100µA 10Hz < f < 10kHz 80 — — — µVRMS VR Long Term Stability (Non-Cumulative) t = 1000Hrs, IR = 100µA 120 — — — ppm VHYST Thermal Hysteresis ΔT = -40°C to +125°C 0.08 — — — % LM4040 4 of 16 August 2019 Document number: DS33195 Rev. 8 - 2
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(cont.) (@TA = +25°C, unless otherwise specified.)
LM4040-41 Conditions Symbol Parameter Typ B Limits C Limits D Limits Units TA
Reverse Breakdown Voltage IR = 100µA +25°C 4.096 — — — V +25°C ±8.2 ±20 ±41 VREF Reverse Breakdown Voltage Tolerance IR = 100µA -40 to +85°C — ±35 ±47 ±81 mV -40 to +125°C ±49 ±60 ±102 +25°C 50 83 83 83 IRMIN Minimum Operating Current — -40 to +85°C 88 88 88 µA — -40 to +125°C 88 88 88 IR = 10mA ±30 — — — — ΔVR/ΔT Average Reverse Breakdown Voltage Temperature Coefficient IR = 1mA -40 to +125°C ±20 ±100 ±100 ±150 ppm/°C IR = 100µA ±20 — — — — +25°C 0.5 0.9 0.9 1.2 IRMIN IR -40 to +85°C 1.2 1.2 1.5 < 1mA — -40 to +125°C 1.2 1.2 1.5 ΔVR/ΔIR Reverse Breakdown Change With Current mV +25°C 3 7 7 9 1mA < IR -40 to +85°C 10 10 13 < 15mA — -40 to +125°C 10 10 13 ZR Dynamic Output Impedance IR = 1mA, f = 120Hz, 0.5 1 1 1.3 Ω IAC = 0.1IR en Noise Voltage IR = 100µA, 10Hz < f < 10kHz 64 — — — µVRMS VR Long Term Stability (Non-Cumulative) t = 1000Hrs, IR = 100µA 120 — — — ppm VHYST Thermal Hysteresis ΔT = -40°C to = +125°C 0.08 80 %
Electrical Characteristics
(cont.) (Test conditions: TA = +25°C, unless otherwise specified.)
LM4040-50 Conditions Typ LM4040 LM4040 LM4040 Symbol Parameter B Limits C Limits D Limits Units
—
TA
Reverse Breakdown Voltage IR = 100µA +25°C 5.0 — — — V V +25°C ±10 ±25 ±50 REF Reverse Breakdown Voltage Tolerance IR = 100µA -40 to +85°C — ±43 ±58 ±99 mV -40 to +125°C ±60 ±75 ±125 +25°C 54 74 74 79 IRMIN Minimum Operating Current — -40 to +85°C µA — 80 80 85 -40 to +125°C 83 83 88 IR = 10mA ±30 — — — ΔVR/ΔT Average Reverse Breakdown Voltage Temperature Coefficient IR = 1mA -40 to +125°C ±20 ±100 ±100 ±150 ppm/°C IR = 100µA ±20 — — — +25°C 0.5 1.0 1.0 1.3 IRMIN ≤ IR ≤ 1mA -40 to +85°C — 1.4 1.4 1.8 -40 to +125°C 1.4 1.4 1.8 ΔVR/ΔIR Reverse Breakdown Change with Current mV +25°C 3.5 8.0 8.0 10.0 1mA ≤ IR ≤ 15mA -40 to +85°C — 12.0 12.0 15.0 -40 to +125°C 12.0 12.0 15.0 ZR Dynamic Output Impedance IR = 1mA, f = 120Hz 0.5 1.1 1.1 1.5 Ω IAC = 0.1IR en Noise Voltage IR = 100µA 10Hz < f < 10kHz 80 — — — µVRMS VR Long Term Stability (Non-Cumulative) t = 1000Hrs, IR = 100µA 120 — — — ppm VHYST Thermal Hysteresis ΔT = -40°C to +125°C 0.08 — — — % LM4040 4 of 16 August 2019 Document number: DS33195 Rev. 8 - 2
www.diodes.com
© Diodes Incorporated Document Outline Printed Circuit Board Layout Considerations