Datasheet LM4040 (Diodes) - 3
| Hersteller | Diodes |
| Beschreibung | PRECISION MICROPOWER SHUNT VOLTAGE REFERENCE |
| Seiten / Seite | 16 / 3 — LM4040. Electrical Characteristics. LM4040-30. Conditions. Symbol. … |
| Dateiformat / Größe | PDF / 1.6 Mb |
| Dokumentensprache | Englisch |
LM4040. Electrical Characteristics. LM4040-30. Conditions. Symbol. Parameter. Typ. LM4040 LM4040 LM4040. B Limits C Limits D Limits. Unit
Modelllinie für dieses Datenblatt
- LM4040B25FTA LM4040B25QFTA LM4040B30FTA LM4040B30QFTA LM4040B33FTA LM4040B33QFTA LM4040B41FTA LM4040B41QFTA LM4040B50FTA LM4040C25FTA LM4040C25QFTA LM4040C30FTA LM4040C33FTA LM4040C33QFTA LM4040C41FTA LM4040C41QFTA LM4040C50FTA LM4040D25FTA LM4040D25QFTA LM4040D30FTA LM4040D30QFTA LM4040D33FTA LM4040D33QFTA LM4040D41FTA LM4040D41QFTA LM4040D50FTA LM4040D50QFTA
Textversion des Dokuments
LM4040 Electrical Characteristics
(continued) (Test conditions: TA = +25°C, unless otherwise specified.)
LM4040-30 Conditions Symbol Parameter Typ LM4040 LM4040 LM4040 B Limits C Limits D Limits Unit
—
TA
Reverse Breakdown Voltage IR = 100µA +25°C 3.0 — — — V V +25°C ±6 ±15 ±30 REF Reverse Breakdown Voltage Tolerance IR = 100µA -40 to +85°C — ±26 ±34 ±59 mV -40 to +125°C 37 ±45 ±75 +25°C 47 62 62 67 IRMIN Minimum Operating Current — -40 to +85°C µA — 67 67 72 -40 to +125°C 70 70 75 IR = 10mA ±20 — — — ΔVR/ΔT Average Reverse Breakdown Voltage Temperature Coefficient IR = 1mA -40 to +125°C ±15 ±100 ±100 ±150 ppm/°C IR = 100µA ±15 — — — +25°C 0.4 0.8 0.8 1.0 IRMIN ≤ IR ≤ 1mA -40 to +85°C — 1.1 1.1 1.3 -40 to +125°C 1.1 1.1 1.3 ΔVR/ΔIR Reverse Breakdown Change with Current mV +25°C 2.7 6.0 6.0 8.0 1mA ≤ IR ≤ 15mA -40 to +85°C — 9.0 9.0 11.0 -40 to +125°C 9.0 9.0 11.0 ZR Dynamic Output Impedance IR = 1mA, f = 120Hz 0.4 0.9 0.9 1.2 Ω IAC = 0.1IR en Noise Voltage IR = 100µA 10Hz < f < 10kHz 35 — — — µVRMS VR Long Term Stability (Non-Cumulative) t = 1000Hrs, IR = 100µA 120 — — — ppm VHYST Thermal Hysteresis ΔT = -40°C to +125°C 0.08 — — — %
Electrical Characteristics
(cont.) (@TA = +25°C, unless otherwise specified.)
LM4040-33 Conditions Symbol Parameter Typ B Limits C Limits D Limits Units - TA
Reverse Breakdown Voltage IR = 100µA +25°C 3.3 V +25°C ±6.6 ±16.5 ±33 VREF Reverse Breakdown Voltage Tolerance IR = 100µA -40 to +85°C — ±28 ±38 ±65 mV -40 to +125°C ±40 ±50 ±83 +25°C 47 62 62 67 IRMIN Minimum Operating Current — -40 to +85°C 67 67 72 µA — -40 to +125°C 70 70 75 IR = 10mA ±20 — — — — ΔVR/ΔT Average Reverse Breakdown Voltage Temperature Coefficient IR = 1mA -40 to +125°C ±15 ±100 ±100 ±150 ppm/°C IR = 100µA ±15 — +25°C 0.4 0.8 0.8 1 IRMIN IR -40 to +85°C 1.1 1.1 1.3 < 1mA — -40 to +125°C 1.1 1.1 1.3 ΔVR/ΔIR Reverse Breakdown Change With Current mV +25°C 2.7 6 6 8 1mA < IR -40 to +85°C 9.0 9 11 < 15mA — -40 to +125°C 9.0 9 11 ZR Dynamic Output Impedance IR = 1mA, f = 120Hz, IAC = 0.4 0.9 0.9 1.2 Ω 0.1IR en Noise Voltage IR = 100µA, 10Hz < f < 10kHz 35 — — — µVRMS VR Long Term Stability (Non-Cumulative) t = 1000Hrs, IR = 100µA 120 — — — ppm VHYST Thermal Hysteresis ΔT = -40°C to = +125°C 0.08 — — — % LM4040 3 of 16 August 2019 Document number: DS33195 Rev. 8 - 2
www.diodes.com
© Diodes Incorporated Document Outline Printed Circuit Board Layout Considerations
(continued) (Test conditions: TA = +25°C, unless otherwise specified.)
LM4040-30 Conditions Symbol Parameter Typ LM4040 LM4040 LM4040 B Limits C Limits D Limits Unit
—
TA
Reverse Breakdown Voltage IR = 100µA +25°C 3.0 — — — V V +25°C ±6 ±15 ±30 REF Reverse Breakdown Voltage Tolerance IR = 100µA -40 to +85°C — ±26 ±34 ±59 mV -40 to +125°C 37 ±45 ±75 +25°C 47 62 62 67 IRMIN Minimum Operating Current — -40 to +85°C µA — 67 67 72 -40 to +125°C 70 70 75 IR = 10mA ±20 — — — ΔVR/ΔT Average Reverse Breakdown Voltage Temperature Coefficient IR = 1mA -40 to +125°C ±15 ±100 ±100 ±150 ppm/°C IR = 100µA ±15 — — — +25°C 0.4 0.8 0.8 1.0 IRMIN ≤ IR ≤ 1mA -40 to +85°C — 1.1 1.1 1.3 -40 to +125°C 1.1 1.1 1.3 ΔVR/ΔIR Reverse Breakdown Change with Current mV +25°C 2.7 6.0 6.0 8.0 1mA ≤ IR ≤ 15mA -40 to +85°C — 9.0 9.0 11.0 -40 to +125°C 9.0 9.0 11.0 ZR Dynamic Output Impedance IR = 1mA, f = 120Hz 0.4 0.9 0.9 1.2 Ω IAC = 0.1IR en Noise Voltage IR = 100µA 10Hz < f < 10kHz 35 — — — µVRMS VR Long Term Stability (Non-Cumulative) t = 1000Hrs, IR = 100µA 120 — — — ppm VHYST Thermal Hysteresis ΔT = -40°C to +125°C 0.08 — — — %
Electrical Characteristics
(cont.) (@TA = +25°C, unless otherwise specified.)
LM4040-33 Conditions Symbol Parameter Typ B Limits C Limits D Limits Units - TA
Reverse Breakdown Voltage IR = 100µA +25°C 3.3 V +25°C ±6.6 ±16.5 ±33 VREF Reverse Breakdown Voltage Tolerance IR = 100µA -40 to +85°C — ±28 ±38 ±65 mV -40 to +125°C ±40 ±50 ±83 +25°C 47 62 62 67 IRMIN Minimum Operating Current — -40 to +85°C 67 67 72 µA — -40 to +125°C 70 70 75 IR = 10mA ±20 — — — — ΔVR/ΔT Average Reverse Breakdown Voltage Temperature Coefficient IR = 1mA -40 to +125°C ±15 ±100 ±100 ±150 ppm/°C IR = 100µA ±15 — +25°C 0.4 0.8 0.8 1 IRMIN IR -40 to +85°C 1.1 1.1 1.3 < 1mA — -40 to +125°C 1.1 1.1 1.3 ΔVR/ΔIR Reverse Breakdown Change With Current mV +25°C 2.7 6 6 8 1mA < IR -40 to +85°C 9.0 9 11 < 15mA — -40 to +125°C 9.0 9 11 ZR Dynamic Output Impedance IR = 1mA, f = 120Hz, IAC = 0.4 0.9 0.9 1.2 Ω 0.1IR en Noise Voltage IR = 100µA, 10Hz < f < 10kHz 35 — — — µVRMS VR Long Term Stability (Non-Cumulative) t = 1000Hrs, IR = 100µA 120 — — — ppm VHYST Thermal Hysteresis ΔT = -40°C to = +125°C 0.08 — — — % LM4040 3 of 16 August 2019 Document number: DS33195 Rev. 8 - 2
www.diodes.com
© Diodes Incorporated Document Outline Printed Circuit Board Layout Considerations