Datasheet FFB2222A, FMB2222A, MMPQ2222A (ON Semiconductor) - 6

400 400
I B1 = I B2 = 320 Ic V cc = 25 V TIME (nS) TIME (nS) 240
160 240
ts 160 tr t off 80 tf 80 t on td 100
I C -COLLECTOR CURRENT (mA) 0
10 1000 1 SOIC-16
SOT-6 0.5 SC70 -6
0.25 0 0 25 50
75
100
TE MPE RATURE (°C) 125 150 V CE = 10 V
I C = 10 mA 2 h re h ie
h fe 1.2 hoe 0.8
0.4 0 20
40
60
80
T A -AMBIENT TEMPERATURE ( o C) 100 Figure 17. Common Emitter Characteristics © 1998 Fairchild Semiconductor Corporation
FFB2222A / FMB2222A / MMPQ2222A Rev. 1.4 1000 V CE = 10 V
T A = 25oC 6
h oe
4
h re
2
h fe
0 h ie
0 10 20
30
40
50
I C -COLLECTOR CURRENT (mA) 60 Figure 16. Common Emitter Characteristics 1.6 0 8 CHAR. RELATIVE TO VALUES AT VCE = 10V CHAR. RELATIVE TO VALUES AT TA = 25oC Figure 15. Power Dissipation vs.
Ambient Temperature 2.4 100
I C -COLLECTOR CURRENT (mA) Figure 14. Switching Time vs. Collector Current CHAR. RELATIVE TO VALUES AT I C = 10mA PD -POWE R DIS SIPATION (W) Figure 13. Turn-On and Turn-Off Times vs.
Collector Current 0.75 10 320 V cc = 25 V 0
10 Ic I B1 = I B2 = 10 1.3 I C = 10 mA
T A = 25oC 1.25
1.2 h fe 1.15
h ie 1.1
1.05
1 h re 0.95
0.9
0.85 hoe 0.8
0.75 0 5 10
15
20
25
30
VCE -COLLECTOR VOLTAGE (V) 35 Figure 18. Common Emitter Characteristics www.fairchildsemi.com
5 FFB2222A / FMB2222A / MMPQ2222A — NPN Multi-Chip General-Purpose Amplifier Typical Performance Characteristics (Continued)