Datasheet FFB2222A, FMB2222A, MMPQ2222A (ON Semiconductor) - 3

HerstellerON Semiconductor
BeschreibungNPN Multi-Chip General-Purpose Amplifier
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DokumentenspracheEnglisch

Datasheet FFB2222A, FMB2222A, MMPQ2222A ON Semiconductor Seite 3

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Part Number Top Mark Package Packing Method FFB2222A .1P SC70 6L Tape and Reel FMB2222A .1P SSOT 6L Tape and Reel MMPQ2222A MMPQ2222A SOIC 16L Tape and Reel Absolute Maximum Ratings(1)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value Unit 45 V VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage 75 V VEBO Emitter-Base Voltage 5.0 V Collector Current -Continuous 500 mA -55 to +150 °C IC
TJ, TSTG Operating and Storage Junction Temperature Range Note:
1. These ratings are based on a maximum junction temperature of 150°C. These are steady-state limits. Fairchild
Semiconductor should be consulted on applications involving pulsed or low-duty cycle operations. Thermal Characteristics(2)
Values are at TA = 25°C unless otherwise noted. Symbol
PD RθJA Max. Parameter Unit FFB2222A FMB2222A MMPQ2222A Total Device Dissipation 300 700 1,000 mW Derate Above 25°C 2.4 5.6 8.0 mW/°C Thermal Resistance, Junction-to-Ambient 415 180 Thermal Resistance, Junction-to-Ambient,
Effective 4 Dies 125 Thermal Resistance, Junction-to-Ambient,
Each Die 240 °C/W Note:
2. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. © 1998 Fairchild Semiconductor Corporation
FFB2222A / FMB2222A / MMPQ2222A Rev. 1.4 www.fairchildsemi.com
2 FFB2222A / FMB2222A / MMPQ2222A — NPN Multi-Chip General-Purpose Amplifier Ordering Information