Datasheet 2SK1940-01 (Inchange Semiconductor) - 2

isc N-Channel Mosfet Transistor 2SK1940-01
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ELECTRICAL CHARACTERISTICS (TC=25
℃
) SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT
V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 1mA 600 V VGS(th) Gate Threshold Voltage VDS= VGS; ID=1mA 2.5 3.5 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 6A 0.75 Ω IGSS Gate-Body Leakage Current VGS= ±30V;VDS= 0 ±100 nA IDSS Zero Gate Voltage Drain Current VDS= 600V; VGS= 0 10 500 µA VSD Forward On-Voltage IS=24A; VGS=0 1.58 V Gfs Forward Transconductance VDS= 25V；ID=6A 6.0 S tr Rise time 60 90 VGS=10V;ID=6A; ton Turn-on time 30 45 VDD=300V; ns tf Fal time RL=10Ω 80 120 toff Turn-off time 140 210
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Document Outline isc N-Channel MOSFET Transistor 2SK19 DESCRIPTION APPLICATIONS ABSOLUTE MAXIMUM RATINGS(Ta=25℃) ARAMETER isc N-Channel Mosfet Transistor 2SK isc N-Channel Mosfet Transistor 2SK1