Datasheet 2SK1940-01 (Inchange Semiconductor)
| Hersteller | Inchange Semiconductor |
| Beschreibung | N-Channel MOSFET Transistor |
| Seiten / Seite | 3 / 1 — isc N-Channel MOSFET Transistor. 2SK1940-01. DESCRIPTION. APPLICATIONS. … |
| Dateiformat / Größe | PDF / 243 Kb |
| Dokumentensprache | Englisch |
isc N-Channel MOSFET Transistor. 2SK1940-01. DESCRIPTION. APPLICATIONS. ABSOLUTE MAXIMUM RATINGS(Ta=25. SYMBOL ARAMETER. VALUE. UNIT
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isc N-Channel MOSFET Transistor 2SK1940-01 DESCRIPTION
·Drain Current –ID= 12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
·Switching regulator ·UPS ·DC-DC converters ·General purpose power amplifier
ABSOLUTE MAXIMUM RATINGS(Ta=25
℃
) SYMBOL ARAMETER VALUE UNIT
VDSS Drain-Source Voltage (VGS=0) 600 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 12 A IDM Drain Current-Single Plused 48 A Ptot Total Dissipation@TC=25℃ 125 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·
THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT
Rth j-c Thermal Resistance, Junction to Case 1.25 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 35 ℃/W
isc website
：
www.iscsemi.com
1
isc & iscsemi is registered trademark
Document Outline isc N-Channel MOSFET Transistor 2SK19 DESCRIPTION APPLICATIONS ABSOLUTE MAXIMUM RATINGS(Ta=25℃) ARAMETER isc N-Channel Mosfet Transistor 2SK isc N-Channel Mosfet Transistor 2SK1
·Drain Current –ID= 12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
·Switching regulator ·UPS ·DC-DC converters ·General purpose power amplifier
ABSOLUTE MAXIMUM RATINGS(Ta=25
℃
) SYMBOL ARAMETER VALUE UNIT
VDSS Drain-Source Voltage (VGS=0) 600 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 12 A IDM Drain Current-Single Plused 48 A Ptot Total Dissipation@TC=25℃ 125 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·
THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT
Rth j-c Thermal Resistance, Junction to Case 1.25 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 35 ℃/W
isc website
：
www.iscsemi.com
1
isc & iscsemi is registered trademark
Document Outline isc N-Channel MOSFET Transistor 2SK19 DESCRIPTION APPLICATIONS ABSOLUTE MAXIMUM RATINGS(Ta=25℃) ARAMETER isc N-Channel Mosfet Transistor 2SK isc N-Channel Mosfet Transistor 2SK1