Datasheet 2N6423 (Inchange Semiconductor) - 2

isc Silicon PNP Power Transistor 2N6423 ELECTRICAL CHARACTERISTICS TC=25
℃
unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V(BR)CEO Col ector-Emitter Breakdown Voltage IC=-50mA -300 V IEBO Emitter -Base Cutoff Current VBE=- 6V -500 uA ICEO Col ector-Emitter Cutoff Current VCB=- 150V -5 mA VCE(sat)-1 Col ector-Emitter Saturation Voltage IC= -0.75A; IB=-0.075A -1 V VCE(sat)-2 Col ector-Emitter Saturation Voltage IC= -1A; IB=-0.125A -1 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= -0.75A; IB=-0.075A -1.8 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= -1A; IB=-0.125A -1.8 V hFE-1 DC Current Gain IC=-0.75A; VCE=-2V 10 100 hFE-2 DC Current Gain IC=-0.75A; VCE= -10V 30 150
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Document Outline isc Silicon PNP Power Transistor DESCRIPTION APPLICATIONS ABSOLUTE MAXIMUM RATINGS(Ta=25℃) isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS