Datasheet 2N6423 (Inchange Semiconductor)

isc Silicon PNP Power Transistor 2N6423 DESCRIPTION
·Col ector-Emitter Breakdown Voltage- : VCEO=-300V(Min) ·Minimum Lot-to-Lot variations for robust device Performance and reliable operation
APPLICATIONS
·Power amplifier and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25
℃
) SYMBOL PARAMETER VALUE UNI T
VCBO Col ector-Base Voltage -500 V VCEO Col ector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -6 V IC Col ector Current-Continuous -2 A P Col ector Power Dissipation D @ T 35 W C=25℃ TJ Junction Temperature -65~200 ℃ Tstg Storage Temperature Range -65~200 ℃
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Document Outline isc Silicon PNP Power Transistor DESCRIPTION APPLICATIONS ABSOLUTE MAXIMUM RATINGS(Ta=25℃) isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS