Datasheet 2N5655G, 2N5657G (ON Semiconductor) - 2
| Hersteller | ON Semiconductor |
| Beschreibung | Plastic NPN Silicon High-Voltage Power Transistors |
| Seiten / Seite | 6 / 2 — 2N5655G, 2N5657G. ELECTRICAL CHARACTERISTICS. Characteristic. Symbol. … |
| Dateiformat / Größe | PDF / 189 Kb |
| Dokumentensprache | Englisch |
2N5655G, 2N5657G. ELECTRICAL CHARACTERISTICS. Characteristic. Symbol. Min. Max. Unit. OFF CHARACTERISTICS. ON CHARACTERISTICS
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2N5655G, 2N5657G ELECTRICAL CHARACTERISTICS
(TC = 25_C unless otherwise noted) (Note 2)
Characteristic Symbol Min Max Unit OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage VCEO(sus) Vdc (IC = 100 mAdc (inductive), L = 50 mH) 2N5655G 250 − 2N5657G 350 − Collector−Emitter Breakdown Voltage V(BR)CEO Vdc (IC = 1.0 mAdc, IB = 0) 2N5655G 250 − 2N5657G 350 − Collector Cutoff Current ICEO mAdc (VCE = 150 Vdc, IB = 0) 2N5655G − 0.1 (VCE = 250 Vdc, IB = 0) 2N5657G − 0.1 Collector Cutoff Current ICEX mAdc (VCE = 250 Vdc, VEB(off) = 1.5 Vdc) 2N5655G − 0.1 (VCE = 350 Vdc, VEB(off) = 1.5 Vdc) 2N5657G − 0.1 (VCE = 150 Vdc, VEB(off) = 1.5 Vdc, TC = 100_C) 2N5655G − 1.0 (VCE = 250 Vdc, VEB(off) = 1.5 Vdc, TC = 100_C) 2N5657G − 1.0 Collector Cutoff Current ICBO mAdc (VCB = 275 Vdc, IE = 0) 2N5655G − 10 (VCB = 375 Vdc, IE = 0) 2N5657G − 10 Emitter Cutoff Current IEBO mAdc (VEB = 6.0 Vdc, IC = 0) − 10
ON CHARACTERISTICS
DC Current Gain (Note 3) hFE − (IC = 50 mAdc, VCE = 10 Vdc) 25 − (IC = 100 mAdc, VCE = 10 Vdc) 30 250 (IC = 250 mAdc, VCE = 10 Vdc) 15 − (IC = 500 mAdc, VCE = 10 Vdc) 5.0 − Collector−Emitter Saturation Voltage (Note 3) VCE(sat) Vdc (IC = 100 mAdc, IB = 10 mAdc) − 1.0 (IC = 250 mAdc, IB = 25 mAdc) − 2.5 (IC = 500 mAdc, IB = 100 mAdc) − 10 Base−Emitter Voltage VBE Vdc (IC = 100 mAdc, VCE = 10 Vdc) (Note 3) − 1.0
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product fT MHz (IC = 50 mAdc, VCE = 10 Vdc, f = 10 MHz) (Note 4) 10 − Output Capacitance Cob pF (VCB = 10 Vdc, IE = 0, f = 100 kHz) − 25 Small−Signal Current Gain hfe − (IC = 100 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 20 − Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Indicates JEDEC registered data for 2N5655 Series. 3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. 4. fT is defined as the frequency at which |hfe| extrapolates to unity.
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2N5655G, 2N5657G ELECTRICAL CHARACTERISTICS
(TC = 25_C unless otherwise noted) (Note 2)
Characteristic Symbol Min Max Unit OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage VCEO(sus) Vdc (IC = 100 mAdc (inductive), L = 50 mH) 2N5655G 250 − 2N5657G 350 − Collector−Emitter Breakdown Voltage V(BR)CEO Vdc (IC = 1.0 mAdc, IB = 0) 2N5655G 250 − 2N5657G 350 − Collector Cutoff Current ICEO mAdc (VCE = 150 Vdc, IB = 0) 2N5655G − 0.1 (VCE = 250 Vdc, IB = 0) 2N5657G − 0.1 Collector Cutoff Current ICEX mAdc (VCE = 250 Vdc, VEB(off) = 1.5 Vdc) 2N5655G − 0.1 (VCE = 350 Vdc, VEB(off) = 1.5 Vdc) 2N5657G − 0.1 (VCE = 150 Vdc, VEB(off) = 1.5 Vdc, TC = 100_C) 2N5655G − 1.0 (VCE = 250 Vdc, VEB(off) = 1.5 Vdc, TC = 100_C) 2N5657G − 1.0 Collector Cutoff Current ICBO mAdc (VCB = 275 Vdc, IE = 0) 2N5655G − 10 (VCB = 375 Vdc, IE = 0) 2N5657G − 10 Emitter Cutoff Current IEBO mAdc (VEB = 6.0 Vdc, IC = 0) − 10
ON CHARACTERISTICS
DC Current Gain (Note 3) hFE − (IC = 50 mAdc, VCE = 10 Vdc) 25 − (IC = 100 mAdc, VCE = 10 Vdc) 30 250 (IC = 250 mAdc, VCE = 10 Vdc) 15 − (IC = 500 mAdc, VCE = 10 Vdc) 5.0 − Collector−Emitter Saturation Voltage (Note 3) VCE(sat) Vdc (IC = 100 mAdc, IB = 10 mAdc) − 1.0 (IC = 250 mAdc, IB = 25 mAdc) − 2.5 (IC = 500 mAdc, IB = 100 mAdc) − 10 Base−Emitter Voltage VBE Vdc (IC = 100 mAdc, VCE = 10 Vdc) (Note 3) − 1.0
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product fT MHz (IC = 50 mAdc, VCE = 10 Vdc, f = 10 MHz) (Note 4) 10 − Output Capacitance Cob pF (VCB = 10 Vdc, IE = 0, f = 100 kHz) − 25 Small−Signal Current Gain hfe − (IC = 100 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 20 − Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Indicates JEDEC registered data for 2N5655 Series. 3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. 4. fT is defined as the frequency at which |hfe| extrapolates to unity.
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