Datasheet KP-2012P3C (Kingbright) - 2

HerstellerKingbright
Beschreibung2.0 x 1.25 mm Phototransistor
Seiten / Seite4 / 2 — KP-2012P3C. ELECTRICAL / OPTICAL CHARACTERISTICS at TA=25°C. Parameter. …
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DokumentenspracheEnglisch

KP-2012P3C. ELECTRICAL / OPTICAL CHARACTERISTICS at TA=25°C. Parameter. Symbol. Min. Typ. Max. Units. Test Conditions. Kingbright

KP-2012P3C ELECTRICAL / OPTICAL CHARACTERISTICS at TA=25°C Parameter Symbol Min Typ Max Units Test Conditions Kingbright

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KP-2012P3C ELECTRICAL / OPTICAL CHARACTERISTICS at TA=25°C Parameter Symbol Min. Typ. Max. Units Test Conditions
I Collector-to-Emitter Breakdown Voltage V C = 100µA BR CEO 30 - - V Ee = 0mW/cm2 I Emitter-to-Collector Breakdown Voltage V E = 100µA BR ECO 5 - - V Ee = 0mW/cm2 I Collector-to-Emitter Saturation Voltage V C = 2mA CE (SAT) - - 0.8 V Ee = 20mW/cm2 V Collector Dark Current I CE = 10V CEO - - 100 nA Ee = 0mW/cm2 Rise Time(10% to 90%) TR - 15 - µS VCE = 5V IC = 1mA RL = 1000Ω Fall Time(90% to 10%) TF - 15 - µS VCE = 5V On State Collector Current I(ON ) 0.2 0.4 - mA Ee = 1mW/cm2 λ = 940nm Range of spectral bandwidth λ0.1 420 - 1120 nm - Wavelength of peak Sensitivity λp - 940 - nm - Angle of half sensitivity 2θ1/2 - 160 - deg -
Kingbright RELATIVE SPECTRAL SENSITIVITY vs. WAVELENGTH RELATIVE RADIANT SENSITIVITY vs. ANGULAR DISPLACEMENT
) 100% 0° -15° 15° Ta = 25 °C a. u. Ta = 25 °C ( -30° 30° 80% itivity -45° 45° 60% ens nsitivity tral s 40% -60° 60° se pec s 20% elative ive R -75° 75° 0% Relat 350 450 550 650 750 850 950 1050 1150 -90° 90° Wavelength (nm) 1.0 0.5 0.0 0.5 1.0 © 2022 Kingbright. All Rights Reserved. Spec No: DSAA4435 / 1203000140 Rev No: V.20 Date: 01/11/2022 Page 2 / 4