Datasheet KP-2012P3C (Kingbright)
Hersteller | Kingbright |
Beschreibung | 2.0 x 1.25 mm Phototransistor |
Seiten / Seite | 4 / 1 — KP-2012P3C. DESCRIPTION. PACKAGE DIMENSIONS. FEATURES. APPLICATIONS. … |
Dateiformat / Größe | PDF / 602 Kb |
Dokumentensprache | Englisch |
KP-2012P3C. DESCRIPTION. PACKAGE DIMENSIONS. FEATURES. APPLICATIONS. RECOMMENDED SOLDERING PATTERN. Kingbright
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KP-2012P3C
2.0 x 1.25 mm Phototransistor
DESCRIPTION PACKAGE DIMENSIONS
Made with NPN silicon phototransistor chips
FEATURES
2.0 mm x 1.25 mm SMD LED, 1.1 mm thickness Mechanically and spectral y matched to the infrared emitting LED lamp Water clear lens Package: 2000 pcs / reel Moisture sensitivity level: 3 Halogen-free RoHS compliant
APPLICATIONS
Infrared applied systems Optoelectronic switches Photodetector control circuits Sensor technology
RECOMMENDED SOLDERING PATTERN
(units : mm; tolerance : ± 0.1)
Kingbright
Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.1(0.004") unless otherwise noted. 3. The specifications, characteristics and technical data described in the datasheet are subject to change without prior notice. 4. The device has a single mounting surface. The device must be mounted according to the specifications.
ABSOLUTE MAXIMUM RATINGS at TA=25°C Parameter Max.Ratings Units
Collector-to-Emitter Voltage 30 V Emitter-to-Collector Voltage 5 V Power Dissipation at(or below) 25°C Free Air Temperature 100 mW Operating Temperature -40 to +85 °C Storage Temperature -40 to +85 °C Note: 1. Relative humidity levels maintained between 40% and 60% in production area are recommended to avoid the build-up of static electricity – Ref JEDEC/JESD625-A and JEDEC/J-STD-033. © 2022 Kingbright. All Rights Reserved. Spec No: DSAA4435 / 1203000140 Rev No: V.20 Date: 01/11/2022
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