Datasheet 2SJ160, 2SJ161, 2SJ162 (Renesas) - 6
| Hersteller | Renesas |
| Beschreibung | Silicon P Channel MOSFET |
| Seiten / Seite | 8 / 6 — 2SJ160, 2SJ161, 2SJ162. Forward Transfer Admittance vs |
| Dateiformat / Größe | PDF / 86 Kb |
| Dokumentensprache | Englisch |
2SJ160, 2SJ161, 2SJ162. Forward Transfer Admittance vs
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2SJ160, 2SJ161, 2SJ162
Forward Transfer Admittance vs.
Frequency Forward Transfer Admittance |yfs| (S) Input Capacitance vs.
Gate to Source Voltage Input Capacitance Ciss (pF) 1000 500 200
VDS = –10 V
f = 1 MHz
100 0 2 4 6 8 10 3
1
0.3
0.1
0.03
0.01 Tc = 25°C
VDS = –10 V
ID = –2 A 0.003
10 k 30 k 100 k 300 k 1M 3M 10 M Frequency f (Hz) Gate to Source Voltage VGS (V) Switching Time vs. Drain Current Switching Time ton, toff (ns) 500
ton 200
100
50 toff 20
10
5
–0.1 –0.2 –0.5 –1 Drain Current –2 –5 –10 ID (A) Switching Time Test Circuit Waveform Output
10%
Input RL Input 90%
ton –20 V
PW = 50 µs
duty ratio = 1% 50 Ω toff 90%
Output
10% Rev.2.00 Sep 07, 2005 page 4 of 5
Forward Transfer Admittance vs.
Frequency Forward Transfer Admittance |yfs| (S) Input Capacitance vs.
Gate to Source Voltage Input Capacitance Ciss (pF) 1000 500 200
VDS = –10 V
f = 1 MHz
100 0 2 4 6 8 10 3
1
0.3
0.1
0.03
0.01 Tc = 25°C
VDS = –10 V
ID = –2 A 0.003
10 k 30 k 100 k 300 k 1M 3M 10 M Frequency f (Hz) Gate to Source Voltage VGS (V) Switching Time vs. Drain Current Switching Time ton, toff (ns) 500
ton 200
100
50 toff 20
10
5
–0.1 –0.2 –0.5 –1 Drain Current –2 –5 –10 ID (A) Switching Time Test Circuit Waveform Output
10%
Input RL Input 90%
ton –20 V
PW = 50 µs
duty ratio = 1% 50 Ω toff 90%
Output
10% Rev.2.00 Sep 07, 2005 page 4 of 5