Datasheet 2SJ160, 2SJ161, 2SJ162 (Renesas) - 5

HerstellerRenesas
BeschreibungSilicon P Channel MOSFET
Seiten / Seite8 / 5 — 2SJ160, 2SJ161, 2SJ162 Main Characteristics. Maximum Safe Operation Area …
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DokumentenspracheEnglisch

2SJ160, 2SJ161, 2SJ162 Main Characteristics. Maximum Safe Operation Area Power vs. Temperature Derating. –20 ID (A)

2SJ160, 2SJ161, 2SJ162 Main Characteristics Maximum Safe Operation Area Power vs Temperature Derating –20 ID (A)

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2SJ160, 2SJ161, 2SJ162 Main Characteristics
Maximum Safe Operation Area Power vs. Temperature Derating
–20 ID (A)
Drain Current Channel Dissipation 100 50 Ta = 25°C –10 I max (Continuous)
D
(–14.3 V,
–7 A) –5 –2
–1 (–120 V, –0.83 A) –0.5 0 50 –0.2
–5 150 100 Case Temperature Tc (°C) –10 –20 –50 –100 –200 Drain to Source Voltage Typical Output Characteristics –500 VDS (V) Typical Transfer Characteristics
–1.0 –10 ID (A) –8 VDS = –10 V Tc = 25°C –9
–8
–7
–6 –5
–4 –0.8
Tc = –25°C
–0.6 –6 Drain Current ID (A) (–140 V, –0.71 A)
(–160 V, –0.63 A)
2SJ160
2SJ161
2SJ162 0 Drain Current )
ot
sh
1
s(
)
)
m
ot
sh 5°C
10
1
2
=
s( c=
m
PW
0 n (T
10
= ratio
PW Ope
DC Pch (W) 150 –4 Pch
–3 –2 =1 00 W –2 25°C
–0.4 75°C –0.2 –1 V
0 VGS = 0 0 –10 –20 –30 –40 0 75°C
–5 25°C –2
Tc = –25°C
–1
–0.5 –0.2
VGD = 0 V
–0.1
–0.1 –0.2 –0.5 –1 Drain Current Rev.2.00 Sep 07, 2005 page 3 of 5 –2 –5 ID (A) –10 –0.8 –1.2 –1.6 –2.0 VGS (V) Drain to Source Voltage vs.
Gate to Source Voltage VDS (on) (V) Drain to Source Saturation Voltage vs.
Drain Current
–10 –0.4 Gate to Source Voltage VDS (V) –10 Drain to Source Voltage Drain to Source Saturation Voltage VDS (sat) (V) Drain to Source Voltage 0 –50 –6 Pulse Test
–8 –5 A –4
–2 A
ID = –1 A –2 0
0 –2 –4 –6 Gate to Source Voltage –8 –10 VGS (V)