Datasheet Si2334DS (Vishay) - 4

Si2334DS
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted 100 0.080 ID = 4.2 A ) Ω 0.065 TJ = 150 °C 10 TJ = 125 °C 0.050 TJ = 25 °C - On-Resistance ( - Source Current (A) 1 I S TJ = 25 °C DS(on) 0.035 R 0.1 0.020 0 0.3 0.6 0.9 1.2 0 2 4 6 8 V - Source-to-Drain Voltage (V) V - Gate-to-Source Voltage (V) SD GS
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
0.8 24 0.7 18 0.6 (V) ID = 250 μA 12 GS(th)V 0.5 Power (W) 6 0.4 0.3 0 - 50 - 25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10 100 T - Temperature (°C) Time (s) J
Threshold Voltage Single Pulse Power
100 Limited by RDS(on)* 10 100 μs 1 1 ms - Drain Current (A) 10 ms I D T 0.1 A = 25 °C Single Pulse 100 ms 1 s, 10 s BVDSS Limited DC 0.01 0.1 1 10 100 V - Drain-to-Source Voltage (V) DS * V > minimum V at which R is specified GS GS DS(on)
Safe Operating Area, Junction-to-Ambient
www.vishay.com Document Number: 66802 4 S10-1533-Rev. A, 19-Jul-10