Datasheet Si2334DS (Vishay) - 3
| Hersteller | Vishay |
| Beschreibung | N-Channel 30 V (D-S) MOSFET |
| Seiten / Seite | 9 / 3 — Si2334DS. TYPICAL CHARACTERISTICS. Output Characteristics. Transfer … |
| Dateiformat / Größe | PDF / 190 Kb |
| Dokumentensprache | Englisch |
Si2334DS. TYPICAL CHARACTERISTICS. Output Characteristics. Transfer Characteristics. On-Resistance vs. Drain Current. Capacitance
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Si2334DS
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted 10 5 VGS = 5 V thru 1.5 V 8 4 6 3 TC = 25 °C 4 2 - Drain Current (A) - Drain Current (A) I D I D 2 1 VGS = 1 V TC = 125 °C TC = - 55 °C 0 0 0.0 0.5 1.0 1.5 2.0 0.0 0.3 0.6 0.9 1.2 1.5 V - Drain-to-Source Voltage (V) V - Gate-to-Source Voltage (V) DS GS
Output Characteristics Transfer Characteristics
0.050 880 0.045 ) C Ω iss 660 VGS = 2.5 V 0.040 440 VGS = 4.5 V 0.035 - On-Resistance ( C - Capacitance (pF) DS(on)R 220 0.030 Coss C 0.025 rss 0 0 2 4 6 8 10 0 6 12 18 24 30 I - Drain Current (A) D V - Drain-to-Source Voltage (V) DS
On-Resistance vs. Drain Current Capacitance
4.5 1.85 ID = 4.2 A 1.60 V VGS = 2.5 V; ID = 4 A DS = 15 V 3.0 1.35 VDS = 8 V VDS = 24 V - On-Resistance 1.10 VGS = 4.5 V; ID = 4.2 A (Normalized) 1.5 DS(on)R - Gate-to-Source Voltage (V) GSV 0.85 0 0.60 0 2 4 6 8 - 50 - 25 0 25 50 75 100 125 150 Q - Total Gate Charge (nC) g T - Junction Temperature (°C) J
Gate Charge On-Resistance vs. Junction Temperature
Document Number: 66802 www.vishay.com S10-1533-Rev. A, 19-Jul-10 3
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted 10 5 VGS = 5 V thru 1.5 V 8 4 6 3 TC = 25 °C 4 2 - Drain Current (A) - Drain Current (A) I D I D 2 1 VGS = 1 V TC = 125 °C TC = - 55 °C 0 0 0.0 0.5 1.0 1.5 2.0 0.0 0.3 0.6 0.9 1.2 1.5 V - Drain-to-Source Voltage (V) V - Gate-to-Source Voltage (V) DS GS
Output Characteristics Transfer Characteristics
0.050 880 0.045 ) C Ω iss 660 VGS = 2.5 V 0.040 440 VGS = 4.5 V 0.035 - On-Resistance ( C - Capacitance (pF) DS(on)R 220 0.030 Coss C 0.025 rss 0 0 2 4 6 8 10 0 6 12 18 24 30 I - Drain Current (A) D V - Drain-to-Source Voltage (V) DS
On-Resistance vs. Drain Current Capacitance
4.5 1.85 ID = 4.2 A 1.60 V VGS = 2.5 V; ID = 4 A DS = 15 V 3.0 1.35 VDS = 8 V VDS = 24 V - On-Resistance 1.10 VGS = 4.5 V; ID = 4.2 A (Normalized) 1.5 DS(on)R - Gate-to-Source Voltage (V) GSV 0.85 0 0.60 0 2 4 6 8 - 50 - 25 0 25 50 75 100 125 150 Q - Total Gate Charge (nC) g T - Junction Temperature (°C) J
Gate Charge On-Resistance vs. Junction Temperature
Document Number: 66802 www.vishay.com S10-1533-Rev. A, 19-Jul-10 3