Datasheet MBR350, MBR360 (ON Semiconductor)
| Hersteller | ON Semiconductor |
| Beschreibung | Axial Lead Rectifiers |
| Seiten / Seite | 6 / 1 — DATA SHEET. www.onsemi.com. SCHOTTKY BARRIER. RECTIFIERS. 3.0 AMPERES. … |
| Dateiformat / Größe | PDF / 167 Kb |
| Dokumentensprache | Englisch |
DATA SHEET. www.onsemi.com. SCHOTTKY BARRIER. RECTIFIERS. 3.0 AMPERES. 50, 60 VOLTS. Features. AXIAL LEAD. CASE 267−05. (DO−201AD). STYLE 1
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DATA SHEET www.onsemi.com
Axial Lead Rectifiers
SCHOTTKY BARRIER RECTIFIERS
MBR350, MBR360
3.0 AMPERES
These devices employ the Schottky Barrier principle in a large area
50, 60 VOLTS
metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling diodes, and polarity protection diodes.
Features
Extremely Low vF Low Power Loss/High Efficiency Highly Stable Oxide Passivated Junction
AXIAL LEAD
Low Stored Charge, Majority Carrier Conduction
CASE 267−05
Pb−Free Packages are Available*
(DO−201AD) STYLE 1 Mechanical Characteristics:
Case: Epoxy, Molded
MARKING DIAGRAM
Weight: 1.1 Gram (Approximately) A Finish: All External Surfaces Corrosion Resistant and Terminal MBR Leads are Readily Solderable 3x0G G Lead Temperature for Soldering Purposes: 260C Max. for 10 Seconds A = Assembly Location Polarity: Cathode indicated by Polarity Band x = 5 or 6 G = Pb−Free Package (Note: Microdot may be in either location)
MAXIMUM RATINGS Rating Symbol Max Unit
Peak Repetitive Reverse Voltage V
ORDERING INFORMATION
RRM V Working Peak Reverse Voltage VRWM See detailed ordering and shipping information on page 4 of DC Blocking Voltage MBR350 VR 50 this data sheet. MBR360 60 Average Rectified Forward Current TA = 65C IO 3.0 A (RqJA = 28C/W, P.C. Board Mounting) Non−Repetitive Peak Surge Current (Note 1) IFSM 80 A (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz, TL = 75C) Operating and Storage Junction Temperature TJ, Tstg −65 to C Range (Reverse Voltage Applied) +150
THERMAL CHARACTERISTICS
Thermal Resistance, Junction−to−Ambient RqJA 28 C/W (see Note 4 − Mounting Data, Mounting Method 3) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Lead Temperature reference is cathode lead 1/32 in from case. *For additional information on our Pb−Free strategy and soldering details, please download the
onsemi
Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
January, 2024 − Rev. 7 MBR350/D
DATA SHEET www.onsemi.com
Axial Lead Rectifiers
SCHOTTKY BARRIER RECTIFIERS
MBR350, MBR360
3.0 AMPERES
These devices employ the Schottky Barrier principle in a large area
50, 60 VOLTS
metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling diodes, and polarity protection diodes.
Features
Extremely Low vF Low Power Loss/High Efficiency Highly Stable Oxide Passivated Junction
AXIAL LEAD
Low Stored Charge, Majority Carrier Conduction
CASE 267−05
Pb−Free Packages are Available*
(DO−201AD) STYLE 1 Mechanical Characteristics:
Case: Epoxy, Molded
MARKING DIAGRAM
Weight: 1.1 Gram (Approximately) A Finish: All External Surfaces Corrosion Resistant and Terminal MBR Leads are Readily Solderable 3x0G G Lead Temperature for Soldering Purposes: 260C Max. for 10 Seconds A = Assembly Location Polarity: Cathode indicated by Polarity Band x = 5 or 6 G = Pb−Free Package (Note: Microdot may be in either location)
MAXIMUM RATINGS Rating Symbol Max Unit
Peak Repetitive Reverse Voltage V
ORDERING INFORMATION
RRM V Working Peak Reverse Voltage VRWM See detailed ordering and shipping information on page 4 of DC Blocking Voltage MBR350 VR 50 this data sheet. MBR360 60 Average Rectified Forward Current TA = 65C IO 3.0 A (RqJA = 28C/W, P.C. Board Mounting) Non−Repetitive Peak Surge Current (Note 1) IFSM 80 A (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz, TL = 75C) Operating and Storage Junction Temperature TJ, Tstg −65 to C Range (Reverse Voltage Applied) +150
THERMAL CHARACTERISTICS
Thermal Resistance, Junction−to−Ambient RqJA 28 C/W (see Note 4 − Mounting Data, Mounting Method 3) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Lead Temperature reference is cathode lead 1/32 in from case. *For additional information on our Pb−Free strategy and soldering details, please download the
onsemi
Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
January, 2024 − Rev. 7 MBR350/D