Datasheet SSM10N961L (Toshiba) - 2

HerstellerToshiba
BeschreibungSilicon N-Channel MOSFET
Seiten / Seite9 / 2 — SSM10N961L. 4. Absolute. Maximum. Ratings. (Note). (Unless. otherwise. …
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DokumentenspracheEnglisch

SSM10N961L. 4. Absolute. Maximum. Ratings. (Note). (Unless. otherwise. specified,. Ta. =. 25. �). Characteristics. Symbol. Rating. Unit. Source-source

SSM10N961L 4 Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 �) Characteristics Symbol Rating Unit Source-source

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SSM10N961L 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 �) Characteristics Symbol Rating Unit Source-source voltage VSSS 30 V Gate-source voltage VGSS ±20 V Source current (DC) (Note 1) IS 9.0 A Source current (DC) (Note 2) 14.0 Source current (pulsed) (Note 3) ISP 72 A Power dissipation (Note 1) PD 0.88 W Power dissipation (t ≤ 10 s) (Note 1) 1.51 W Channel temperature Tch 150 � Storage temperature Tstg -55 to 150 � Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Device mounted on an 25 mm × 27.5 mm, t = 1.6 mm, Cu Pad: 18 µm, 407 mm2, FR4 glass epoxy board Note 2: Device mounted on an 25 mm × 27.5 mm, t = 1.6 mm, Cu Pad: 70 µm, 687.5 mm2, FR4 glass epoxy board Note 3: Pulse width ≤ 10 µs, Duty ≤ 1 % Note: The MOSFETs in this device are sensitive to electrostatic discharge. When handling this device, the worktables, operators, soldering irons and other objects should be protected against anti-static discharge. Note: The channel-to-ambient thermal resistance, Rth(ch-a), and the drain power dissipation, PD, vary according to the board material, board area, board thickness and pad area. When using this device, be sure to take heat dissipation fully into account. 5. Safety Precautions This section lists important precautions which users of semiconductor devices (and anyone else) should observe in order to avoid injury to human body and damage to property, and to ensure safe and correct use of our products. [Handling Precaution for MOSFET in use of Protection Circuit for Battery Pack] Use a unit, for example PTC Thermistor, which can shut off the power supply if a short-circuit occurs. If the power supply is not shut off on the occurring short-circuit, a large short-circuit current will flow continuously, which may cause the device to catch fire ore smoke. The product listed in this document is intended for usage in Lithium Ion Battery charge and discharge control application. So it is responsible for customer when using the product in the different application. ©2023 2 2023-06-26 Toshiba Electronic Devices & Storage Corporation Rev.1.0