Datasheet 2N6667, 2N6668 (ON Semiconductor) - 5
| Hersteller | ON Semiconductor |
| Beschreibung | Darlington Silicon Power Transistors |
| Seiten / Seite | 6 / 5 — 2N6667, 2N6668. Figure 11. Typical “On” Voltages. Figure 12. Typical … |
| Dateiformat / Größe | PDF / 130 Kb |
| Dokumentensprache | Englisch |
2N6667, 2N6668. Figure 11. Typical “On” Voltages. Figure 12. Typical Temperature Coefficients
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2N6667, 2N6668
3 +5 C) ° +4 hFE@VCE + 3.0V T *I J = 25°C C/IB ≤ 2.5 +3 3 TS) 25°C to 150°C +2 2 +1 -55°C to 25°C TAGE (VOL 0 VBE(sat) @ IC/IB = 250 , VOL 1.5 -1 V ∗θ TURE COEFFICIENTS (mV/ VC for VCE(sat) -2 VBE @ VCE = 3 V 25°C to 150°C 1 -3 θVB for VBE -55 -4 °C to 25°C , TEMPERA V V CE(sat) @ IC/IB = 250 θ 0.5 -5 0.1 0.2 0.3 0.5 0.7 1 2 3 5 7 10 0.1 0.2 0.3 0.5 0.7 1 2 3 5 7 10 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMP)
Figure 11. Typical “On” Voltages Figure 12. Typical Temperature Coefficients
105 REVERSE FORWARD 104 μ (A) 103 VCE = 30 V 102 OR CURRENT TJ = 150°C 101 100°C 100 , COLLECT I C 25°C 10-1 +0.6 +0.4 +0.2 0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 -1.4 VBE, BASE-EMITTER VOLTAGE (VOLTS)
Figure 13. Typical Collector Cut−Off Region http://onsemi.com 5
3 +5 C) ° +4 hFE@VCE + 3.0V T *I J = 25°C C/IB ≤ 2.5 +3 3 TS) 25°C to 150°C +2 2 +1 -55°C to 25°C TAGE (VOL 0 VBE(sat) @ IC/IB = 250 , VOL 1.5 -1 V ∗θ TURE COEFFICIENTS (mV/ VC for VCE(sat) -2 VBE @ VCE = 3 V 25°C to 150°C 1 -3 θVB for VBE -55 -4 °C to 25°C , TEMPERA V V CE(sat) @ IC/IB = 250 θ 0.5 -5 0.1 0.2 0.3 0.5 0.7 1 2 3 5 7 10 0.1 0.2 0.3 0.5 0.7 1 2 3 5 7 10 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMP)
Figure 11. Typical “On” Voltages Figure 12. Typical Temperature Coefficients
105 REVERSE FORWARD 104 μ (A) 103 VCE = 30 V 102 OR CURRENT TJ = 150°C 101 100°C 100 , COLLECT I C 25°C 10-1 +0.6 +0.4 +0.2 0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 -1.4 VBE, BASE-EMITTER VOLTAGE (VOLTS)
Figure 13. Typical Collector Cut−Off Region http://onsemi.com 5