Datasheet 2N6667, 2N6668 (ON Semiconductor) - 3
| Hersteller | ON Semiconductor |
| Beschreibung | Darlington Silicon Power Transistors |
| Seiten / Seite | 6 / 3 — 2N6667, 2N6668. Figure 2. Switching Times Test Circuit. Figure 3. Power … |
| Dateiformat / Größe | PDF / 130 Kb |
| Dokumentensprache | Englisch |
2N6667, 2N6668. Figure 2. Switching Times Test Circuit. Figure 3. Power Derating. Figure 4. Typical Switching Times
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2N6667, 2N6668
VCC - 30 V RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS RC D SCOPE 1, MUST BE FAST RECOVERY TYPES e.g., TUT 1N5825 USED ABOVE IB [ 100 mA V MSD6100 USED BELOW I 2 R B [ 100 mA B APPROX + 8 V FOR td AND tr, D1 IS DISCONNECTED AND V2 = 0 51 D1 [ 8 k [ 120 t 0 r, tf v 10 ns DUTY CYCLE = 1.0% V1 + 4.0 V APPROX 25 - 12 V μs
Figure 2. Switching Times Test Circuit
TA TC 4 80 10 7 VCC = 30 V 5 IC/IB = 250 TTS) I A B1 = IB2 3 60 3 T t J = 25°C r 2 T TION (W C (s)μ A ts 2 40 1 t, TIME 0.7 0.5 TA 1 20 0.3 .td , POWER DISSIP tf D 0.2 P 0.1 0 0 20 40 60 80 100 120 140 160 0.1 0.2 0.3 0.5 0.7 1 2 3 5 7 10 T, TEMPERATURE (°C) IC, COLLECTOR CURRENT (AMPS)
Figure 3. Power Derating Figure 4. Typical Switching Times
1 D = 0.5 0.5 ANCE 0.3 0.2 0.2 RESIST 0.1 0.1 P(pk) ZθJC(t) = r(t) RθJC R 0.05 θJC = 1.92°C/W MAX THERMAL0.05 D CURVES APPLY FOR POWER 0.03 0.02 t1 PULSE TRAIN SHOWN r(t) NORMALIZED EFFECTIVE t2 READ TIME AT t1 0.02 SINGLE PULSE 0.01 TRANSIENT TJ(pk) - TC = P(pk) RθJC(t) DUTY CYCLE, D = t1/t2 0.01 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 1000 t, TIME (ms)
Figure 5. Thermal Response http://onsemi.com 3
VCC - 30 V RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS RC D SCOPE 1, MUST BE FAST RECOVERY TYPES e.g., TUT 1N5825 USED ABOVE IB [ 100 mA V MSD6100 USED BELOW I 2 R B [ 100 mA B APPROX + 8 V FOR td AND tr, D1 IS DISCONNECTED AND V2 = 0 51 D1 [ 8 k [ 120 t 0 r, tf v 10 ns DUTY CYCLE = 1.0% V1 + 4.0 V APPROX 25 - 12 V μs
Figure 2. Switching Times Test Circuit
TA TC 4 80 10 7 VCC = 30 V 5 IC/IB = 250 TTS) I A B1 = IB2 3 60 3 T t J = 25°C r 2 T TION (W C (s)μ A ts 2 40 1 t, TIME 0.7 0.5 TA 1 20 0.3 .td , POWER DISSIP tf D 0.2 P 0.1 0 0 20 40 60 80 100 120 140 160 0.1 0.2 0.3 0.5 0.7 1 2 3 5 7 10 T, TEMPERATURE (°C) IC, COLLECTOR CURRENT (AMPS)
Figure 3. Power Derating Figure 4. Typical Switching Times
1 D = 0.5 0.5 ANCE 0.3 0.2 0.2 RESIST 0.1 0.1 P(pk) ZθJC(t) = r(t) RθJC R 0.05 θJC = 1.92°C/W MAX THERMAL0.05 D CURVES APPLY FOR POWER 0.03 0.02 t1 PULSE TRAIN SHOWN r(t) NORMALIZED EFFECTIVE t2 READ TIME AT t1 0.02 SINGLE PULSE 0.01 TRANSIENT TJ(pk) - TC = P(pk) RθJC(t) DUTY CYCLE, D = t1/t2 0.01 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 1000 t, TIME (ms)
Figure 5. Thermal Response http://onsemi.com 3