Datasheet STD4NK50Z-1, STD4NK50ZT4 (STMicroelectronics) - 2
| Hersteller | STMicroelectronics |
| Beschreibung | N-channel 500 V, 2.2 Ω typ., 3 A SuperMESH Power MOSFETs in IPAK and DPAK packages |
| Seiten / Seite | 23 / 2 — STD4NK50Z-1, STD4NK50ZT4. Electrical ratings. Table 1. Absolute maximum … |
| Dateiformat / Größe | PDF / 585 Kb |
| Dokumentensprache | Englisch |
STD4NK50Z-1, STD4NK50ZT4. Electrical ratings. Table 1. Absolute maximum ratings. Symbol. Parameter. Value. Unit
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STD4NK50Z-1, STD4NK50ZT4 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit
VDS Drain-source voltage 500 V VGS Gate-source voltage ±30 V ID Drain current (continuous) at TC = 25 °C 3 A ID Drain current (continuous) at TC = 100 °C 1.9 A IDM (1) Drain current (pulsed) 12 A PTOT Total dissipation at TC = 25 °C 45 W dv/dt (2) Peak diode recovery voltage slope 4.5 V/ns ESD Gate-source human body model (C = 100 pF, R = 1.5 kΩ) 2.8 kV Tj Operating junction temperature range -55 to 150 °C Tstg Storage temperature range 1. Pulse width limited by safe operating area. 2. ISD ≤ 3 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS.
Table 2. Thermal data Symbol Parameter Value Unit IPAK DPAK
Rthj-case Thermal resistance junction-case 2.78 °C/W Rthj-amb Thermal resistance junction-ambient 100 °C/W Rthj-pcb (1) Thermal resistance junction-pcb 50 °C/W 1. When mounted on an 1-inch² FR-4, 2oz Cu board.
Table 3. Avalanche characteristics Symbol Parameter Value Unit
Avalanche current, repetitive or not-repetitive IAR 3 A (pulse width limited by Tj max) Single pulse avalanche energy EAS 120 mJ (starting Tj = 25 °C, ID = IAR, VDD = 50 V)
DS2913
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Rev 3 page 2/23
Document Outline 1 Electrical ratings 2 Electrical characteristics 2.1 Electrical characteristics (curves) 3 Test circuits 4 Package information 4.1 IPAK (TO-251) type A package information 4.2 IPAK (TO-251) type C package information 4.3 DPAK (TO-252) type A package information 4.4 DPAK (TO-252) type C package information 4.5 DPAK (TO-252) packing information 5 Ordering information Revision history
STD4NK50Z-1, STD4NK50ZT4 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit
VDS Drain-source voltage 500 V VGS Gate-source voltage ±30 V ID Drain current (continuous) at TC = 25 °C 3 A ID Drain current (continuous) at TC = 100 °C 1.9 A IDM (1) Drain current (pulsed) 12 A PTOT Total dissipation at TC = 25 °C 45 W dv/dt (2) Peak diode recovery voltage slope 4.5 V/ns ESD Gate-source human body model (C = 100 pF, R = 1.5 kΩ) 2.8 kV Tj Operating junction temperature range -55 to 150 °C Tstg Storage temperature range 1. Pulse width limited by safe operating area. 2. ISD ≤ 3 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS.
Table 2. Thermal data Symbol Parameter Value Unit IPAK DPAK
Rthj-case Thermal resistance junction-case 2.78 °C/W Rthj-amb Thermal resistance junction-ambient 100 °C/W Rthj-pcb (1) Thermal resistance junction-pcb 50 °C/W 1. When mounted on an 1-inch² FR-4, 2oz Cu board.
Table 3. Avalanche characteristics Symbol Parameter Value Unit
Avalanche current, repetitive or not-repetitive IAR 3 A (pulse width limited by Tj max) Single pulse avalanche energy EAS 120 mJ (starting Tj = 25 °C, ID = IAR, VDD = 50 V)
DS2913
-
Rev 3 page 2/23
Document Outline 1 Electrical ratings 2 Electrical characteristics 2.1 Electrical characteristics (curves) 3 Test circuits 4 Package information 4.1 IPAK (TO-251) type A package information 4.2 IPAK (TO-251) type C package information 4.3 DPAK (TO-252) type A package information 4.4 DPAK (TO-252) type C package information 4.5 DPAK (TO-252) packing information 5 Ordering information Revision history