Datasheet BTA04, BTB04 (STMicroelectronics) - 2

BTA04 T/D/S/A BTB04 T/D/S/A THERMAL RESISTANCE Symbol Parameter Value Unit
Rth (j-a) Junction to ambient 60 °C/W Rth (j-c) DC Junction to case for DC BTA 4.4 °C/W BTB 3.2 Rth (j-c) AC Junction to case for 360° conduction angle (F = 50Hz) BTA 3.3 °C/W BTB 2.4
GATE CHARACTERISTICS
(maximum values) PG(AV) = 1W PGM = 40W (tp = 20µs) IGM = 4A (tp = 20µs) VGM = 16V (tp = 20µs)
ELECTRICAL CHARACTERISTICS BTA / BTB04 Symbol Test conditions Quadrant Unit T D S A
IGT VD = 12V (DC) RL = 33Ω Tj = 25°C I - II - III MAX. 5 5 10 10 mA IV MAX. 5 10 10 25 VGT VD = 12V (DC) RL = 33Ω Tj = 25°C I - II - III - IV MAX. 1.5 V VGD VD = VDRM RL = 3.3kΩ Tj =110°C I - II - III - IV MIN. 0.2 V tgt VD = VDRM IG = 40mA Tj = 25°C I - II - III - IV TYP. 2 µs dIG/dt = 0.5A/µs IL IG = 1.2IGT Tj = 25°C I - III - IV TYP. 10 10 20 20 mA II 20 20 40 40 IH* IT = 100mA Gate open Tj = 25°C MAX. 15 15 25 25 mA VTM * ITM = 5.5A tp = 380µs Tj = 25°C MAX. 1.65 V IDRM VDRM rated Tj = 25°C MAX. 0.01 mA IRRM VRRM rated Tj = 110°C MAX. 0.75 dV/dt * Linear slope up to Tj = 110°C TYP. 10 10 - - V/µs VD = 67% VDRM gate open MIN. - - 10 10 (dI/dt)c* (dI/dt)c = 1.8A/ms Tj = 110°C TYP. 1 1 5 5 V/µs * For either polarity of electrode A2 voltage with reference to electrode A1 2/6