Datasheet BTA04, BTB04 (STMicroelectronics) - 4
| Hersteller | STMicroelectronics |
| Beschreibung | Sensitive Gate Triacs |
| Seiten / Seite | 6 / 4 — BTA04 T/D/S/A BTB04 T/D/S/A. Fig. 1:. Fig. 2:. Fig. 3:. Fig. 4:. Fig. 5:. … |
| Dateiformat / Größe | PDF / 449 Kb |
| Dokumentensprache | Englisch |
BTA04 T/D/S/A BTB04 T/D/S/A. Fig. 1:. Fig. 2:. Fig. 3:. Fig. 4:. Fig. 5:. Fig. 6:. Zth/Rth. Zth(j-c). 0.1. Zth(j-a). tp(s). 0.01. 1E-3. 1E-2. 1E-1
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BTA04 T/D/S/A BTB04 T/D/S/A Fig. 1:
Maximum RMS power dissipation versus
Fig. 2:
Correlation between maximum RMS power RMS on-state current (F = 50Hz).(Curves are cut dissipation and maximum allowable temperature off by (dI/dt)c limitation) (Tamb and Tcase) for different thermal resistances heatsink + contact (BTA).
Fig. 3:
Correlation between maximum RMS power
Fig. 4:
RMS on-state current versus case temper- dissipation and maximum allowable temperature ature. (Tamb and Tcase) for different thermal resistances heatsink + contact (BTB).
Fig. 5:
Relative variation of thermal impedance
Fig. 6:
Relative variation of gate trigger current versus pulse duration. and holding current versus junction temperature.
Zth/Rth 1 Zth(j-c) 0.1 Zth(j-a) tp(s) 0.01 1E-3 1E-2 1E-1 1E+0 1E+1 1E +2 5E+2
4/6
Maximum RMS power dissipation versus
Fig. 2:
Correlation between maximum RMS power RMS on-state current (F = 50Hz).(Curves are cut dissipation and maximum allowable temperature off by (dI/dt)c limitation) (Tamb and Tcase) for different thermal resistances heatsink + contact (BTA).
Fig. 3:
Correlation between maximum RMS power
Fig. 4:
RMS on-state current versus case temper- dissipation and maximum allowable temperature ature. (Tamb and Tcase) for different thermal resistances heatsink + contact (BTB).
Fig. 5:
Relative variation of thermal impedance
Fig. 6:
Relative variation of gate trigger current versus pulse duration. and holding current versus junction temperature.
Zth/Rth 1 Zth(j-c) 0.1 Zth(j-a) tp(s) 0.01 1E-3 1E-2 1E-1 1E+0 1E+1 1E +2 5E+2
4/6