Preliminary Datasheet EPC2304 (Efficient Power Conversion) - 7

eGaN® FET DATASHEET
EPC2304
TRANSPARENT VIEW 7 PIN DESCRIPTION 1
Gate
2
Source
6 3
Drain
4
Source
5 5
Drain
6
Source
4 7
Drain
3 1 2 Transparent Top View RECOMMENDED
c1 c2
LAND PATTERN
c4 Land pattern is solder mask defined. (units in mm) c3 It is recommended to have on-Cu trace PCB vias. f  g d1
DIM Nominal
c5
A
5.4 d2
B
3.4 h
c1
2.1
c2
0.90
c3
0.55 e A
c4
1.20
c5
0.975
d1
0.45
d2
0.35 R50
e
0.85
f
0.30
g
0.2 c3 d2
h
0.05 c4 B
Additional Resources Available:
• Assembly resources –
https:/ epc-co.com/epc/Portals/0/epc/documents/product-training/Appnote_GaNassembly.pdf
• Library of Altium footprints for production FETs and ICs –
https:/ epc-co.com/epc/documents/altium-files/EPC%20Altium%20Library.zip
(for preliminary device Altium footprints, contact EPC) Efficient Power Conversion Corporation (EPC) reserves the right to make changes without further notice to any prod- ucts herein to improve reliability, function or design. EPC does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the Information subject to change without notice. rights of others. eGaN® is a registered trademark of Efficient Power Conversion Corporation. EPC Patent Listing: epc-co.com/epc/AboutEPC/Patents.aspx Revised December, 2022 EPC – POWER CONVERSION TECHNOLOGY LEADER | EPC-CO.COM | ©2022 | | 7