Preliminary Datasheet EPC2304 (Efficient Power Conversion) - 2

eGaN® FET DATASHEET
EPC2304
Dynamic Characteristics# (TJ = 25°C unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
CISS Input Capacitance 3195 CRSS Reverse Transfer Capacitance VDS = 100 V, VGS = 0 V 2.7 COSS Output Capacitance 649 pF COSS(ER) Effective Output Capacitance, Energy Related (Note 1) 852 VDS = 0 to 100 V, VGS = 0 V COSS(TR) Effective Output Capacitance, Time Related (Note 2) 1156 RG Gate Resistance 0.4 Ω QG Total Gate Charge VDS = 100 V, VGS = 5 V, ID = 32 A 24 QGS Gate-to-Source Charge 7.6 QGD Gate-to-Drain Charge VDS = 100 V, ID = 32 A 2.5 nC QG(TH) Gate Charge at Threshold 5 QOSS Output Charge VDS = 100 V, VGS = 0 V 116 QRR Source-Drain Recovery Charge 0 # Defined by design. Not subject to production test. All measurements were done with substrate shorted to source. Note 1: COSS(ER) is a fixed capacitance that gives the same stored energy as COSS while VDS is rising from 0 to 50% BVDSS. Note 2: COSS(TR) is a fixed capacitance that gives the same charging time as COSS while VDS is rising from 0 to 50% BVDSS.
Figure 1: Typical Output Characteristics at 25°C Figure 2: Typical Transfer Characteristics
250 250 25˚C 200 125˚C 200 VDS = 3 V DS = 6 V 150 150 VGS = 5 V V 100 GS = 4 V
– Drain Current (A) – Drain Current (A)
100 VGS = 3 V
I D
V
I D
GS = 2 V 50 50 0 0 0 1 2 3 4 5 6 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) Figure 3: Typical RDS(on) vs. VGS for Various Drain Currents Figure 4: Typical RDS(on) vs. VGS for Various Temperatures )
I
Ω
D = 16 A
)
20 ID = 32 A
Ω
20 25˚C ID = 48 A 125˚C
ance (m
ID = 64 A
ance (m
ID = 32 A 15 15
ce Resist ur ce Resist ur So So to-
10
to-
10
– Drain- – Drain-
5 5
R DS(on) R DS(on)
0 0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VGS – Gate-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V)
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