Datasheet IRFD110 (Vishay) - 6

IRFD110
www.vishay.com Vishay Siliconix L V V DS DS Vary tp to obtain t required I p AS VDD Rg D.U.T. + V - DD V I DS AS 10 V t 0.01 p W IAS
Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms
350 ID Top 300 0.82 A 1.4 A Bottom 2.0 A 250 200 150 100 , Single Pulse Energy (mJ) AS 50 E V = 25 V DD 0 25 50 75 100 125 150 175 91127_12c Starting TJ, Junction Temperature (°C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator Same type as D.U.T. Q 50 kΩ G 10 V 12 V 0.2 µF 0.3 µF Q Q GS GD + V D.U.T. DS - VG VGS 3 mA Charge I I G D Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit
S21-0885-Rev. D, 30-Aug-2021
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