Datasheet IRFD110 (Vishay) - 8

HerstellerVishay
BeschreibungPower MOSFET
Seiten / Seite9 / 8 — Package Information. HVM DIP. INCHES. MILLIMETERS. DIM. MIN. MAX. Note
Dateiformat / GrößePDF / 154 Kb
DokumentenspracheEnglisch

Package Information. HVM DIP. INCHES. MILLIMETERS. DIM. MIN. MAX. Note

Package Information HVM DIP INCHES MILLIMETERS DIM MIN MAX Note

Modelllinie für dieses Datenblatt

Textversion des Dokuments

Package Information
Vishay Siliconix
HVM DIP
(High voltage) 0.248 [6.29] 0.240 [6.10] 0.043 [1.09] 0.197 [5.00] 0.035 [0.89] 0.133 [3.37] 0.189 [4.80] 0.125 [3.18] 0.180 [4.57] 0.160 [4.06] 0.094 [2.38] A L 0.086 [2.18] 0.160 [4.06] 0.140 [3.56] 0° to 15° 0.017 [0.43] 2 x 0.045 [1.14] 0.013 [0.33] 2 x 0.035 [0.89] 0.024 [0.60] 4 x E min. 0.020 [0.51] 0.100 [2.54] typ. E max.
INCHES MILLIMETERS DIM. MIN. MAX. MIN. MAX.
A 0.310 0.330 7.87 8.38 E 0.300 0.425 7.62 10.79 L 0.270 0.290 6.86 7.36 ECN: X10-0386-Rev. B, 06-Sep-10 DWG: 5974
Note
1. Package length does not include mold flash, protrusions or gate burrs. Package width does not include interlead flash or protrusions. Document Number: 91361 www.vishay.com Revision: 06-Sep-10 1