Datasheet SI1470DH (Vishay) - 3
| Hersteller | Vishay |
| Beschreibung | N-Channel 30 V (D-S) MOSFET |
| Seiten / Seite | 7 / 3 — Si1470DH. TYPICAL CHARACTERISTICS. Output Characteristics. Transfer … |
| Dateiformat / Größe | PDF / 126 Kb |
| Dokumentensprache | Englisch |
Si1470DH. TYPICAL CHARACTERISTICS. Output Characteristics. Transfer Characteristics Curves vs. Temperature
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Si1470DH
Vishay Siliconix
TYPICAL CHARACTERISTICS
TA = 25 °C, unless otherwise noted 12 3.0 V = 5 V thru 3 V GS 2.5 9 (A) V = 2.5 V GS (A) 2.0 Current 6 Current 1.5 TC = 125 °C - Drain - Drain 1.0 I D I D 3 V = 2 V GS TC = 25 °C 0.5 V = 1.5 GS V TC = - 55 °C 0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 0.0 0.5 1.0 1.5 2.0 2.5 V V DS - Drain-to-Source Voltage (V) GS - Gate-to-Source Voltage (V)
Output Characteristics Transfer Characteristics Curves vs. Temperature
0.15 800 ) 0.12 (Ω V 600 GS = 2.5 V Ciss (pF) 0.09 esistance -R 400 VGS = 4.5 V - On 0.06 n) (o C - Capacitance DS 200 R 0.03 Coss C rss 0 0 0 3 6 9 12 0 6 12 18 24 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
5 1.6 ID = 3.7 A VDS = 15 V V (V) 4 1.4 GS = 4.5 V I D = 3.7 A, 4.1 A VDS = 24 V oltage V 3 1.2 V GS = 2.5 V esistance ID = 3.1 A -R -Source - On -to 2 (Normalized) 1.0 (on) S D - Gate R GS 1 0.8 V 0 0.6 0 2 4 6 - 50 - 25 0 25 50 75 100 125 150 Q T g - Total Gate Charge (nC) J - Junction Temperature (°C)
Gate Charge On-Resistance vs. Junction Temperature
Document Number: 74277 www.vishay.com S10-0646-Rev. B, 22-Mar-10 3
Vishay Siliconix
TYPICAL CHARACTERISTICS
TA = 25 °C, unless otherwise noted 12 3.0 V = 5 V thru 3 V GS 2.5 9 (A) V = 2.5 V GS (A) 2.0 Current 6 Current 1.5 TC = 125 °C - Drain - Drain 1.0 I D I D 3 V = 2 V GS TC = 25 °C 0.5 V = 1.5 GS V TC = - 55 °C 0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 0.0 0.5 1.0 1.5 2.0 2.5 V V DS - Drain-to-Source Voltage (V) GS - Gate-to-Source Voltage (V)
Output Characteristics Transfer Characteristics Curves vs. Temperature
0.15 800 ) 0.12 (Ω V 600 GS = 2.5 V Ciss (pF) 0.09 esistance -R 400 VGS = 4.5 V - On 0.06 n) (o C - Capacitance DS 200 R 0.03 Coss C rss 0 0 0 3 6 9 12 0 6 12 18 24 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
5 1.6 ID = 3.7 A VDS = 15 V V (V) 4 1.4 GS = 4.5 V I D = 3.7 A, 4.1 A VDS = 24 V oltage V 3 1.2 V GS = 2.5 V esistance ID = 3.1 A -R -Source - On -to 2 (Normalized) 1.0 (on) S D - Gate R GS 1 0.8 V 0 0.6 0 2 4 6 - 50 - 25 0 25 50 75 100 125 150 Q T g - Total Gate Charge (nC) J - Junction Temperature (°C)
Gate Charge On-Resistance vs. Junction Temperature
Document Number: 74277 www.vishay.com S10-0646-Rev. B, 22-Mar-10 3