Datasheet SI1470DH (Vishay) - 2
| Hersteller | Vishay |
| Beschreibung | N-Channel 30 V (D-S) MOSFET |
| Seiten / Seite | 7 / 2 — Si1470DH. SPECIFICATIONS. Parameter Symbol. Test. Conditions. Min. Typ. … |
| Dateiformat / Größe | PDF / 126 Kb |
| Dokumentensprache | Englisch |
Si1470DH. SPECIFICATIONS. Parameter Symbol. Test. Conditions. Min. Typ. Max. Unit. Static. Dynamicb. Drain-Source Body Diode Characteristics
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Si1470DH
Vishay Siliconix
SPECIFICATIONS
TJ = 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ. Max. Unit Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 30 V VDS Temperature Coefficient ΔVDS/TJ 27.41 ID = 250 µA mV/°C VGS(th) Temperature Coefficient ΔVGS(th)/ - 3.83 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 0.6 1.6 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 12 V ± 100 nA VDS = 30 V, VGS = 0 V 1 nA Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V, TJ = 85 °C 10 µA On-State Drain Currenta ID(on) VDS = ≥ 5 V, VGS = 4.5 V 12 A VGS = 4.5 V, ID = 3.8 A 0.055 0.066 Drain-Source On-State Resistancea R Ω DS(on) VGS = 2.5 V, ID = 3.1 A 0.079 0.095 Forward Transconductance gfs VDS = 15 V, ID = 3.8 A 11.2 S
Dynamicb
Input Capacitance Ciss 510 Output Capacitance C V oss DS = 15 V, VGS = 0 V, f = 1 MHz 66 pF Reverse Transfer Capacitance Crss 39 VDS = 15 V, VGS = 5 V, ID = 3.8 A 5 7.5 Total Gate Charge Qg 4.85 7.3 nC Gate-Source Charge Q V gs DS = 15 V, VGS = 4.5 V, ID = 3.8 A 1.35 Gate-Drain Charge Qgd 1.26 Gate Resistance Rg f = 1 MHz 7.3 10.95 Ω Turn-On Delay Time td(on) 9.0 15 Rise Time tr V 51 77 DD = 15 V, RL = 5.0 Ω ns I Turn-Off DelayTime t D ≅ 3.0 A, VGEN = 4.5 V, Rg = 1 Ω d(off) 18 27 Fall Time tf 7.1 10.65
Drain-Source Body Diode Characteristics
Continous Source-Drain Diode Current IS TC = 25 °C 2.3 A Pulse Diode Forward Currenta ISM 12 Body Diode Voltage VSD IS = 1.8 A 0.8 1.2 V Body Diode Reverse Recovery Time trr 11.5 17.25 nC Body Diode Reverse Recovery Charge Qrr 5.2 7.8 IF = 2.3 A, dI/dt = 100 A/µs Reverse Recovery Fall Time t ns a 7.7 Reverse Recovery Rise Time tb 3.8 Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 74277 2 S10-0646-Rev. B, 22-Mar-10
Vishay Siliconix
SPECIFICATIONS
TJ = 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ. Max. Unit Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 30 V VDS Temperature Coefficient ΔVDS/TJ 27.41 ID = 250 µA mV/°C VGS(th) Temperature Coefficient ΔVGS(th)/ - 3.83 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 0.6 1.6 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 12 V ± 100 nA VDS = 30 V, VGS = 0 V 1 nA Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V, TJ = 85 °C 10 µA On-State Drain Currenta ID(on) VDS = ≥ 5 V, VGS = 4.5 V 12 A VGS = 4.5 V, ID = 3.8 A 0.055 0.066 Drain-Source On-State Resistancea R Ω DS(on) VGS = 2.5 V, ID = 3.1 A 0.079 0.095 Forward Transconductance gfs VDS = 15 V, ID = 3.8 A 11.2 S
Dynamicb
Input Capacitance Ciss 510 Output Capacitance C V oss DS = 15 V, VGS = 0 V, f = 1 MHz 66 pF Reverse Transfer Capacitance Crss 39 VDS = 15 V, VGS = 5 V, ID = 3.8 A 5 7.5 Total Gate Charge Qg 4.85 7.3 nC Gate-Source Charge Q V gs DS = 15 V, VGS = 4.5 V, ID = 3.8 A 1.35 Gate-Drain Charge Qgd 1.26 Gate Resistance Rg f = 1 MHz 7.3 10.95 Ω Turn-On Delay Time td(on) 9.0 15 Rise Time tr V 51 77 DD = 15 V, RL = 5.0 Ω ns I Turn-Off DelayTime t D ≅ 3.0 A, VGEN = 4.5 V, Rg = 1 Ω d(off) 18 27 Fall Time tf 7.1 10.65
Drain-Source Body Diode Characteristics
Continous Source-Drain Diode Current IS TC = 25 °C 2.3 A Pulse Diode Forward Currenta ISM 12 Body Diode Voltage VSD IS = 1.8 A 0.8 1.2 V Body Diode Reverse Recovery Time trr 11.5 17.25 nC Body Diode Reverse Recovery Charge Qrr 5.2 7.8 IF = 2.3 A, dI/dt = 100 A/µs Reverse Recovery Fall Time t ns a 7.7 Reverse Recovery Rise Time tb 3.8 Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 74277 2 S10-0646-Rev. B, 22-Mar-10