Datasheet 2N5031 (Microsemi) - 3

HerstellerMicrosemi
BeschreibungRF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Seiten / Seite4 / 3 — 2N5031. Symbol. Test Conditions. Value. Min. Typ. Max. Unit. S11. S21. …
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DokumentenspracheEnglisch

2N5031. Symbol. Test Conditions. Value. Min. Typ. Max. Unit. S11. S21. S12. S22. MSC1303.PDF 10-25-99

2N5031 Symbol Test Conditions Value Min Typ Max Unit S11 S21 S12 S22 MSC1303.PDF 10-25-99

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2N5031
FUNCTIONAL
Symbol Test Conditions Value Min. Typ. Max. Unit
G Maximum Unilateral Gain (1) IC = 1 mAdc, VCE = 6Vdc, U max f = 400 MHz - 12 - dB MAG Maximum Available Gain IC = 1 mAdc, VCE = 6Vdc, f = 400 MHz - 12.4 - dB Table 1. Common Emitter S-Parameters, @ VCE = 10 V, IC = 50 mA
f S11 S21 S12 S22
(MHz) |S11| ∠ φ |S21| ∠ φ |S12| ∠ φ |S22| ∠ φ 100 .610 -137 23.8 116 .026 46 .522 -78 200 .659 -161 13.2 98 .033 47 .351 -106 300 .671 -171 9.0 89 .040 51 .304 -120 400 .675 -178 6.8 83 .047 55 .292 -128 500 .677 176 5.5 77 .055 58 .293 -132 600 .678 172 4.6 72 .064 61 .299 -134 700 .677 168 4.0 68 .073 62 .306 -135 800 .679 184 3.5 64 .082 63 .314 -136 900 .678 160 3.1 60 .092 64 .322 -138 1000 .682 156 2.8 56 .102 65 .311 -139
MSC1303.PDF 10-25-99