Datasheet 2N5031 (Microsemi)
| Hersteller | Microsemi |
| Beschreibung | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
| Seiten / Seite | 4 / 1 — 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 … |
| Dateiformat / Größe | PDF / 92 Kb |
| Dokumentensprache | Englisch |
140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855. 2N5031
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140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 2N5031 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Features • Silicon NPN, To-72 packaged VHF/UHF Transistor • 1.2 GHz Current-Gain Bandwidth Product @ 5mA IC 2 1. Emitter • Maximum Unilateral Gain – 12 dB (typ) @ 400 MHz 2. Base 1 3 3. Collector 4 4. Case
TO-72
DESCRIPTION: General Purpose small-signal, pre-driver, and driver, applications targeted for military and industrial equipment. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol Parameter Value Unit
VCEO Collector-Emitter Voltage 10 Vdc VCBO Collector-Base Voltage 15 Vdc VEBO Emitter-Base Voltage 3.0 Vdc IC Collector Current 20 mA Thermal Data P 200 mWatts D Total Device Dissipation @ TA = 25ºC Derate above 25ºC 1.14 mW/ º
C MSC1303.PDF 10-25-99
Features • Silicon NPN, To-72 packaged VHF/UHF Transistor • 1.2 GHz Current-Gain Bandwidth Product @ 5mA IC 2 1. Emitter • Maximum Unilateral Gain – 12 dB (typ) @ 400 MHz 2. Base 1 3 3. Collector 4 4. Case
TO-72
DESCRIPTION: General Purpose small-signal, pre-driver, and driver, applications targeted for military and industrial equipment. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol Parameter Value Unit
VCEO Collector-Emitter Voltage 10 Vdc VCBO Collector-Base Voltage 15 Vdc VEBO Emitter-Base Voltage 3.0 Vdc IC Collector Current 20 mA Thermal Data P 200 mWatts D Total Device Dissipation @ TA = 25ºC Derate above 25ºC 1.14 mW/ º
C MSC1303.PDF 10-25-99